| No. |
Part Name |
Description |
Manufacturer |
| 10981 |
TC59S6404BFT-10 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 10982 |
TC59S6404BFT-80 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 10983 |
TC59S6404BFT/BFTL-80 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
| 10984 |
TC59S6404BFT/BFTL10 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
| 10985 |
TC59S6404BFTL |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 10986 |
TC59S6404BFTL-10 |
4,194,304-words x 4BANKS x 4-BITS synchronous dynamic RAM |
TOSHIBA |
| 10987 |
TC59S6404BFTL-80 |
4,194,304-words x 4BANKS x 4-BITS synchronous dynamic RAM |
TOSHIBA |
| 10988 |
TC59S6408 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 10989 |
TC59S6408BFT |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 10990 |
TC59S6408BFT-10 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 10991 |
TC59S6408BFT-80 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 10992 |
TC59S6408BFT-80 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
| 10993 |
TC59S6408BFT/BFTL-80 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
| 10994 |
TC59S6408BFT/BFTL10 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
| 10995 |
TC59S6408BFTL |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 10996 |
TC59S6408BFTL-10 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 10997 |
TC59S6408BFTL-80 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 10998 |
TC59S6416 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
| 10999 |
TC59S6416-10 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 11000 |
TC59S6416-80 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 11001 |
TC59S6416BFT |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 11002 |
TC59S6416BFT-10 |
1,048,576-words x 4BANKS x 16-BITS synchronous dynamic RAM |
TOSHIBA |
| 11003 |
TC59S6416BFT-80 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 11004 |
TC59S6416BFT/BFTL-80 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
| 11005 |
TC59S6416BFT/BFTL10 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
| 11006 |
TC59S6416BFTL |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 11007 |
TC59S6416BFTL-10 |
1,048,576-words x 4BANKS x 16-BITS synchronous dynamic RAM |
TOSHIBA |
| 11008 |
TC59S6416BFTL-80 |
1,048,576-words x 4BANKS x 16-BITS synchronous dynamic RAM |
TOSHIBA |
| 11009 |
TC59YM816BKG |
XDR™ DRAM |
TOSHIBA |
| 11010 |
TC59YM916BKG |
XDR™ DRAM |
TOSHIBA |
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