| No. |
Part Name |
Description |
Manufacturer |
| 11041 |
UPA840 |
NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE |
NEC |
| 11042 |
UPA840TC |
NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE |
NEC |
| 11043 |
UPA840TC-T1 |
NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE |
NEC |
| 11044 |
UPC1023H |
30-40V; 3.5-6mA; direct coupled 2-stage amplifier with common emitter output stage |
NEC |
| 11045 |
UPC805T |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
NEC |
| 11046 |
UPD61171 |
Second Generation Enhanced Multimedia Architecture |
NEC |
| 11047 |
USFZ10V |
ZENER DIODE SILICON EPITAXIAL PLANAR DIODE |
Korea Electronics (KEC) |
| 11048 |
USFZ11V |
ZENER DIODE SILICON EPITAXIAL PLANAR DIODE |
Korea Electronics (KEC) |
| 11049 |
USFZ12V |
ZENER DIODE SILICON EPITAXIAL PLANAR DIODE |
Korea Electronics (KEC) |
| 11050 |
USFZ13V |
ZENER DIODE SILICON EPITAXIAL PLANAR DIODE |
Korea Electronics (KEC) |
| 11051 |
USFZ15V |
ZENER DIODE SILICON EPITAXIAL PLANAR DIODE |
Korea Electronics (KEC) |
| 11052 |
USFZ16V |
ZENER DIODE SILICON EPITAXIAL PLANAR DIODE |
Korea Electronics (KEC) |
| 11053 |
USFZ18V |
ZENER DIODE SILICON EPITAXIAL PLANAR DIODE |
Korea Electronics (KEC) |
| 11054 |
USFZ20V |
ZENER DIODE SILICON EPITAXIAL PLANAR DIODE |
Korea Electronics (KEC) |
| 11055 |
USFZ22V |
ZENER DIODE SILICON EPITAXIAL PLANAR DIODE |
Korea Electronics (KEC) |
| 11056 |
USFZ24V |
ZENER DIODE SILICON EPITAXIAL PLANAR DIODE |
Korea Electronics (KEC) |
| 11057 |
USFZ27V |
ZENER DIODE SILICON EPITAXIAL PLANAR DIODE |
Korea Electronics (KEC) |
| 11058 |
USFZ30V |
ZENER DIODE SILICON EPITAXIAL PLANAR DIODE |
Korea Electronics (KEC) |
| 11059 |
USFZ33V |
ZENER DIODE SILICON EPITAXIAL PLANAR DIODE |
Korea Electronics (KEC) |
| 11060 |
USFZ36V |
ZENER DIODE SILICON EPITAXIAL PLANAR DIODE |
Korea Electronics (KEC) |
| 11061 |
USFZ4.3V |
ZENER DIODE SILICON EPITAXIAL PLANAR DIODE |
Korea Electronics (KEC) |
| 11062 |
USFZ4.7V |
ZENER DIODE SILICON EPITAXIAL PLANAR DIODE |
Korea Electronics (KEC) |
| 11063 |
USFZ5.1V |
ZENER DIODE SILICON EPITAXIAL PLANAR DIODE |
Korea Electronics (KEC) |
| 11064 |
USFZ6.2V |
ZENER DIODE SILICON EPITAXIAL PLANAR DIODE |
Korea Electronics (KEC) |
| 11065 |
USFZ6.8V |
ZENER DIODE SILICON EPITAXIAL PLANAR DIODE |
Korea Electronics (KEC) |
| 11066 |
USFZ7.5V |
ZENER DIODE SILICON EPITAXIAL PLANAR DIODE |
Korea Electronics (KEC) |
| 11067 |
USFZ8.2V |
ZENER DIODE SILICON EPITAXIAL PLANAR DIODE |
Korea Electronics (KEC) |
| 11068 |
USFZ9.1V |
ZENER DIODE SILICON EPITAXIAL PLANAR DIODE |
Korea Electronics (KEC) |
| 11069 |
UTV005 |
0.5 W, 20 V, 470-860 MHz common emitter transistor |
GHz Technology |
| 11070 |
UTV100B |
100 W, 28 V, 470-860 MHz common emitter transistor |
GHz Technology |
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