| No. |
Part Name |
Description |
Manufacturer |
| 11041 |
2SC1922 |
TO-3 Power Package Transistors (NPN) |
Unknow |
| 11042 |
2SC1929 |
Silicon NPN Power Transistors TO-220C package |
Savantic |
| 11043 |
2SC1942 |
HIGH VOLTAGE POWER SWITCHING TV HORIZONTAL DEFLECTION OUTPUT |
Hitachi Semiconductor |
| 11044 |
2SC1942 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
| 11045 |
2SC1944 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 11046 |
2SC1945 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 11047 |
2SC1946 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 11048 |
2SC1946A |
MITSUBISHI RF POWER TRANSISTOR |
Mitsubishi Electric Corporation |
| 11049 |
2SC1947 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 11050 |
2SC1953 |
Power Device - Power Transistors - Others |
Panasonic |
| 11051 |
2SC1953 |
Power Device - Power Transistors - Others |
Panasonic |
| 11052 |
2SC1953 |
Silicon NPN Power Transistors TO-126 package |
Savantic |
| 11053 |
2SC1955 |
Silicon NPN epitaxial planar VHF band power transistor |
TOSHIBA |
| 11054 |
2SC1957 |
NPN Silicon Power Transistor |
NEC |
| 11055 |
2SC1959 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 11056 |
2SC1965 |
NPN epitaxial planar RF power VHF transistor 6W 13.5V |
Mitsubishi Electric Corporation |
| 11057 |
2SC1966 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 11058 |
2SC1967 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 11059 |
2SC1968 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 11060 |
2SC1968A |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 11061 |
2SC1969 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 11062 |
2SC1970 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 11063 |
2SC1971 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 11064 |
2SC1972 |
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications) |
Mitsubishi Electric Corporation |
| 11065 |
2SC1985 |
Silicon NPN Power Transistors TO-220 package |
Savantic |
| 11066 |
2SC1986 |
Silicon NPN Power Transistors TO-220 package |
Savantic |
| 11067 |
2SC2001 |
Medium Power Amplifiers and Switches |
Unknow |
| 11068 |
2SC2001 |
Transistor. General purpose applications high total power disipation . Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 600mW. Collector current Ic = 7 |
USHA India LTD |
| 11069 |
2SC2020 |
RP POWER TRANSISTOR |
SONY |
| 11070 |
2SC2022 |
Silicon NPN Power Transistors TO-220C package |
Savantic |
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