| No. |
Part Name |
Description |
Manufacturer |
| 11101 |
BFR38 |
Epitaxial planar PNP transistor intended for very low noise TV aerial amplifiers and MATV preamplifier applications up to 1GHz |
SGS-ATES |
| 11102 |
BFR38 |
Epitaxial planar PNP transistor intended for very low noise TV aerial amplifiers and MATV preamplifier applications up to 1GHz |
SGS-ATES |
| 11103 |
BFR38 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 11104 |
BFR460L3E6327 |
RF-Bipolar - NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules |
Infineon |
| 11105 |
BFR49 |
NPN silicon microwave transistor, suitable for amplifiers up to S-band frequencies |
Philips |
| 11106 |
BFR90 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 11107 |
BFR90A |
NPN silicon planar epitaxial transistor intended for use in VHF and UHF wideband amplifiers |
Philips |
| 11108 |
BFR91 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. |
Philips |
| 11109 |
BFR91 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. |
Philips |
| 11110 |
BFR91 |
Epitaxial planar NPN transistor, designed for VHF-UHF medium level amplifier up to 1.5GHz |
SGS-ATES |
| 11111 |
BFR91 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 11112 |
BFR91A |
NPN silicon planar epitaxial transistor for use in UHF and microwave amplifiers, low noise, high power gain, gold metallization |
Philips |
| 11113 |
BFR92P |
RF-Bipolar - NPN Silicon RF transistor for broadband amplifiers |
Infineon |
| 11114 |
BFR92P |
NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) |
Siemens |
| 11115 |
BFR92T |
RF-Bipolar - NPN Silicon RF transistor for broadband amplifiers and fast non-saturated switches |
Infineon |
| 11116 |
BFR92W |
RF-Bipolar - NPN Silicon RF transistor for broadband amplifiers |
Infineon |
| 11117 |
BFR92W |
NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) |
Siemens |
| 11118 |
BFR93A |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers |
Infineon |
| 11119 |
BFR93A |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA) |
Siemens |
| 11120 |
BFR93AT |
RF-Bipolar - NPN Silicon RF transistor for low distortion broadband amplifiers and oscillators in SC75 package |
Infineon |
| 11121 |
BFR93AW |
RF-Bipolar - NPN Silicon RF transistor for low distortion broadband amplifiers/oscillators |
Infineon |
| 11122 |
BFR93AW |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) |
Siemens |
| 11123 |
BFR93P |
NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA.) |
Siemens |
| 11124 |
BFR949F |
RF-Bipolar - NPN Silicon RF transistor for low, high gain broadband amplifiers in TSFP-3 package |
Infineon |
| 11125 |
BFR949L3 |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers in TSLP-3 |
Infineon |
| 11126 |
BFR949T |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers in SC-75 |
Infineon |
| 11127 |
BFR96 |
NPN silicon planar epitaxial transistor intended for use in UHF and microwave amplifiers |
Philips |
| 11128 |
BFR96 |
Epitaxial planar NPN transistor for VHF-UHF high level amplifier |
SGS-ATES |
| 11129 |
BFR96 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 11130 |
BFR96H |
Epitaxial planar NPN transistor for VHF-UHF high level amplifier |
SGS-ATES |
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