| No. |
Part Name |
Description |
Manufacturer |
| 1111 |
2SD1398 |
RF & MICROWAVE TRANSISTORS 850-960 MHz APPLICATIONS |
ST Microelectronics |
| 1112 |
2SD1398 |
RF & MICROWAVE TRANSISTORS 850-960 MHz APPLICATIONS |
ST Microelectronics |
| 1113 |
2SD1414 |
RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS |
SGS Thomson Microelectronics |
| 1114 |
2SD1414 |
RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS |
SGS Thomson Microelectronics |
| 1115 |
2SD1414 |
RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS |
ST Microelectronics |
| 1116 |
2SD1414 |
RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS |
ST Microelectronics |
| 1117 |
2SD1509 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (DARLINGTON) MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS, SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. |
TOSHIBA |
| 1118 |
2SD1631 |
Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications |
TOSHIBA |
| 1119 |
2SD1658 |
Transistor Silicon NPN Epitaxial Type (Darlington power transistor) Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications |
TOSHIBA |
| 1120 |
2SD1784 |
Field Effect Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington) Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications |
TOSHIBA |
| 1121 |
2SD2012 |
NPN SILICON POWER TRANSISTOR |
ST Microelectronics |
| 1122 |
2SD2088 |
Transistor Silicon NPN Epitaxial Type (Darlington power transistor) Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications |
TOSHIBA |
| 1123 |
2SD2130 |
Transistor Silicon NPN Epitaxial Type (Darlington power transistor) Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications |
TOSHIBA |
| 1124 |
2SD2206 |
Transistor Silicon NPN Epitaxial Type (Darlington power transistor) Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications |
TOSHIBA |
| 1125 |
2SD2480 |
Transistor Silicon NPN Epitaxial Type (Darlington power transistor) Micro Motor Drive, Hammer Drive, Switching and Power Amplifier Applications |
TOSHIBA |
| 1126 |
2SD2536 |
Transistor Silicon NPN Epitaxial Type (Darlington power transistor) Switching Applications Micro Motor Drive, Hammer Drive Applications |
TOSHIBA |
| 1127 |
2SD560 |
SILICON NPN EPITAXIAL DARLINGTON TRANSISTOR (5 AMP/ 100 VOLT) |
Fujitsu Microelectronics |
| 1128 |
2SD882 |
NPN medium power transistor |
ST Microelectronics |
| 1129 |
2SK118 |
Field Effect Transistor Silicon N Channel Junction Type General Purpose and Impedance Converter and Condenser Microphone Applications |
TOSHIBA |
| 1130 |
2SK1578 |
N-Channel Junction FET Capacitor Microphone Applications |
SANYO |
| 1131 |
2SK208 |
Field Effect Transistor Silicon N Channel Junction Type General Purpose and Impedance Converter and Condenser Microphone Applications |
TOSHIBA |
| 1132 |
2SK2219 |
Capacitor Microphone Applications |
SANYO |
| 1133 |
2SK2881 |
For Low Frequency Amplify Application N Channel Junction type Micro(Frame type) |
Isahaya Electronics Corporation |
| 1134 |
2SK3321 |
N CHANNEL JUNCTION TYPE (GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS) |
TOSHIBA |
| 1135 |
2SK334 |
Silicon N-Channel Junction-Type Field Effect TR For CONDENSER MICROPHONES |
SANYO |
| 1136 |
2SK377 |
Capacitor Microphone Applications |
SANYO |
| 1137 |
2SK596 |
CAPACITOR MICROPHONE APPLICATIONS |
SANYO |
| 1138 |
2SK596A |
V(gdo): -20V; I(g): 10mA; 100mW; capacitor microphone application |
SANYO |
| 1139 |
2SK596B |
V(gdo): -20V; I(g): 10mA; 100mW; capacitor microphone application |
SANYO |
| 1140 |
2SK596C |
V(gdo): -20V; I(g): 10mA; 100mW; capacitor microphone application |
SANYO |
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