| No. |
Part Name |
Description |
Manufacturer |
| 1111 |
1526-8 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 1112 |
1527-8 |
Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications |
SGS Thomson Microelectronics |
| 1113 |
152911207-001 |
350mWAudio Power Amplifier with Shutdown Mode |
Chengdu Sino Microelectronics System |
| 1114 |
1536-3 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 1115 |
1536-3 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 1116 |
1536-8 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 1117 |
1536-8 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 1118 |
15KE |
1500 WATT PEAK POWER TRANSIENT VOLTAGE SUPPRESSORS |
Bytes |
| 1119 |
15KE68 |
Discrete POWER & Signal Technologies |
Fairchild Semiconductor |
| 1120 |
15SMCJ |
SURFACE MOUNT TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE - 5.0 to 220 Volts 1500 Watt Peak Power Pulse) |
Panjit International Inc |
| 1121 |
1616-050 |
High power Class C, CW transistor designed for 1.6GHz satellite communications applications including GPS and INMARSAT |
SGS Thomson Microelectronics |
| 1122 |
1617-35 |
Pulsed Power L-Band (Si) |
Microsemi |
| 1123 |
16DL2DZ47A |
HIGH EFFICIENCY DIODE STACK (SWITCHING TYPE POWER LUPPLY APPLICATION) |
TOSHIBA |
| 1124 |
16F10 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1125 |
16F100 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1126 |
16F100R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1127 |
16F10R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1128 |
16F120 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1129 |
16F120R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1130 |
16F20 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1131 |
16F20R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1132 |
16F40 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1133 |
16F40R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1134 |
16F60 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1135 |
16F60R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1136 |
16F80 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1137 |
16F80R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1138 |
16GWJ2C42 |
SCHOTTKY BARRIER RECTIFIER STACK (SWITCHING TYPE POWER SUPPLY APPLICATION.) |
TOSHIBA |
| 1139 |
16GWJ2CZ47 |
SCHOTTKY BARRIER RECTIFIER STACK (SWITCHING TYPE POWER SUPPLY APPLICATION) |
TOSHIBA |
| 1140 |
16RIA |
MEDIUM POWER THYRISTORS |
International Rectifier |
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