No. |
Part Name |
Description |
Manufacturer |
1111 |
K4H510438C-ULA2 |
512Mb C-die DDR SDRAM Specification |
Samsung Electronic |
1112 |
K4H510438C-ULB0 |
512Mb C-die DDR SDRAM Specification |
Samsung Electronic |
1113 |
K4H510438C-ULB3 |
512Mb C-die DDR SDRAM Specification |
Samsung Electronic |
1114 |
K4H510838C-ULA2 |
512Mb C-die DDR SDRAM Specification |
Samsung Electronic |
1115 |
K4H510838C-ULB0 |
512Mb C-die DDR SDRAM Specification |
Samsung Electronic |
1116 |
K4H510838C-ULB3 |
512Mb C-die DDR SDRAM Specification |
Samsung Electronic |
1117 |
K4H510838C-ULCC |
512Mb C-die DDR SDRAM Specification |
Samsung Electronic |
1118 |
K4H511638C-ULA2 |
512Mb C-die DDR SDRAM Specification |
Samsung Electronic |
1119 |
K4H511638C-ULB0 |
512Mb C-die DDR SDRAM Specification |
Samsung Electronic |
1120 |
K4H511638C-ULB3 |
512Mb C-die DDR SDRAM Specification |
Samsung Electronic |
1121 |
K4H511638C-ULCC |
512Mb C-die DDR SDRAM Specification |
Samsung Electronic |
1122 |
K4S280432F-UL75 |
128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
Samsung Electronic |
1123 |
K4S280832F-UL75 |
128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
Samsung Electronic |
1124 |
K4S281632F-UL60 |
128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
Samsung Electronic |
1125 |
K4S281632F-UL60/75 |
128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
Samsung Electronic |
1126 |
K4S281632F-UL75 |
128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
Samsung Electronic |
1127 |
K4S560432E-UL75 |
256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
Samsung Electronic |
1128 |
K4S560832E-UL75 |
256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
Samsung Electronic |
1129 |
K4S561632E-UL60 |
256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
Samsung Electronic |
1130 |
K4S561632E-UL75 |
256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
Samsung Electronic |
1131 |
K6R4016C1D-UL10 |
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
1132 |
K6R4016C1D-UL8 |
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
1133 |
LMX2430SLEX/NOPB |
3.0 GHz/0.8 GHz PLLatinum Dual High Frequency Synthesizer for RF Personal Communications 20-ULGA -40 to 85 |
Texas Instruments |
1134 |
LMX2433SLEX/NOPB |
3.6 GHz/1.7 GHz PLLatinum Dual High Frequency Synthesizer for RF Personal Communications 20-ULGA -40 to 85 |
Texas Instruments |
1135 |
LMX2434SLEX/NOPB |
5.0 GHz/2.5 GHz PLLatinum Low Power Dual Frequency Synthesizer for RF Personal Communications 20-ULGA -40 to 85 |
Texas Instruments |
1136 |
LMX2470SLEX |
2.6 GHz Delta-Sigma Fractional-N PLL with 800 MHz Integer-N PLL 24-ULGA -40 to 85 |
Texas Instruments |
1137 |
LMX2470SLEX/NOPB |
2.6 GHz Delta-Sigma Fractional-N PLL with 800 MHz Integer-N PLL 24-ULGA -40 to 85 |
Texas Instruments |
1138 |
TG110-E050N5 |
Extended Temperature Range, E-Ultra�� 10/100BASE-TX SOIC-16 Magnetic Modules |
etc |
1139 |
TG110-E055N5 |
Extended Temperature Range, E-Ultra�� 10/100BASE-TX SOIC-16 Magnetic Modules |
etc |
1140 |
TG110-E120N5 |
Extended Temperature Range, E-Ultra�� 10/100BASE-TX SOIC-16 Magnetic Modules |
etc |
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