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Datasheets for -UL

Datasheets found :: 1173
Page: | 34 | 35 | 36 | 37 | 38 | 39 | 40 |
No. Part Name Description Manufacturer
1111 K4H510438C-ULA2 512Mb C-die DDR SDRAM Specification Samsung Electronic
1112 K4H510438C-ULB0 512Mb C-die DDR SDRAM Specification Samsung Electronic
1113 K4H510438C-ULB3 512Mb C-die DDR SDRAM Specification Samsung Electronic
1114 K4H510838C-ULA2 512Mb C-die DDR SDRAM Specification Samsung Electronic
1115 K4H510838C-ULB0 512Mb C-die DDR SDRAM Specification Samsung Electronic
1116 K4H510838C-ULB3 512Mb C-die DDR SDRAM Specification Samsung Electronic
1117 K4H510838C-ULCC 512Mb C-die DDR SDRAM Specification Samsung Electronic
1118 K4H511638C-ULA2 512Mb C-die DDR SDRAM Specification Samsung Electronic
1119 K4H511638C-ULB0 512Mb C-die DDR SDRAM Specification Samsung Electronic
1120 K4H511638C-ULB3 512Mb C-die DDR SDRAM Specification Samsung Electronic
1121 K4H511638C-ULCC 512Mb C-die DDR SDRAM Specification Samsung Electronic
1122 K4S280432F-UL75 128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Samsung Electronic
1123 K4S280832F-UL75 128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Samsung Electronic
1124 K4S281632F-UL60 128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Samsung Electronic
1125 K4S281632F-UL60/75 128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Samsung Electronic
1126 K4S281632F-UL75 128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Samsung Electronic
1127 K4S560432E-UL75 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Samsung Electronic
1128 K4S560832E-UL75 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Samsung Electronic
1129 K4S561632E-UL60 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Samsung Electronic
1130 K4S561632E-UL75 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Samsung Electronic
1131 K6R4016C1D-UL10 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. Samsung Electronic
1132 K6R4016C1D-UL8 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. Samsung Electronic
1133 LMX2430SLEX/NOPB 3.0 GHz/0.8 GHz PLLatinum Dual High Frequency Synthesizer for RF Personal Communications 20-ULGA -40 to 85 Texas Instruments
1134 LMX2433SLEX/NOPB 3.6 GHz/1.7 GHz PLLatinum Dual High Frequency Synthesizer for RF Personal Communications 20-ULGA -40 to 85 Texas Instruments
1135 LMX2434SLEX/NOPB 5.0 GHz/2.5 GHz PLLatinum Low Power Dual Frequency Synthesizer for RF Personal Communications 20-ULGA -40 to 85 Texas Instruments
1136 LMX2470SLEX 2.6 GHz Delta-Sigma Fractional-N PLL with 800 MHz Integer-N PLL 24-ULGA -40 to 85 Texas Instruments
1137 LMX2470SLEX/NOPB 2.6 GHz Delta-Sigma Fractional-N PLL with 800 MHz Integer-N PLL 24-ULGA -40 to 85 Texas Instruments
1138 TG110-E050N5 Extended Temperature Range, E-Ultra�� 10/100BASE-TX SOIC-16 Magnetic Modules etc
1139 TG110-E055N5 Extended Temperature Range, E-Ultra�� 10/100BASE-TX SOIC-16 Magnetic Modules etc
1140 TG110-E120N5 Extended Temperature Range, E-Ultra�� 10/100BASE-TX SOIC-16 Magnetic Modules etc


Datasheets found :: 1173
Page: | 34 | 35 | 36 | 37 | 38 | 39 | 40 |



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