| No. |
Part Name |
Description |
Manufacturer |
| 1111 |
MQ1N4083A |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 1112 |
MQC02083 |
Temperature Sensors |
Power-One |
| 1113 |
MQF40.083-1000/07 |
Monolithic Crystal Filter, Selected customer types |
Vectron |
| 1114 |
MR2083HA |
Multi-Cell II power rectifier diodes designed for high-current rectifier service |
Motorola |
| 1115 |
MSA-0835 |
Cascadable Silicon Bipolar MMIC Amplifiers |
Agilent (Hewlett-Packard) |
| 1116 |
MSA-0836 |
Cascadable Silicon Bipolar MMIC Amplifiers |
Agilent (Hewlett-Packard) |
| 1117 |
MSA-0836-BLK |
Cascadable Silicon Bipolar MMIC Amplifiers |
Agilent (Hewlett-Packard) |
| 1118 |
MSA-0836-TR1 |
Cascadable Silicon Bipolar MMIC Amplifiers |
Agilent (Hewlett-Packard) |
| 1119 |
MV1N4083 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 1120 |
MV1N4083A |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 1121 |
MX1N4083 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 1122 |
MX1N4083A |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 1123 |
N02L083WC2A |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K x 8 bit |
etc |
| 1124 |
N02L083WC2AN |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K x 8 bit |
etc |
| 1125 |
N02L083WC2AN2 |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K x 8 bit |
etc |
| 1126 |
N02L083WC2AT |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K x 8 bit |
etc |
| 1127 |
N02L083WC2AT2 |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K x 8 bit |
etc |
| 1128 |
NCL30083 |
Dimmable Quasi-Resonant Primary Side Current-Mode Controller for LED Lighting |
ON Semiconductor |
| 1129 |
NCP1083 |
Integrated High Power PoE-PD Interface & DC-DC Converter Controller with 9 V Auxiliary Supply Support |
ON Semiconductor |
| 1130 |
NE32083A |
LOW COSET LOW NOISE K-BAND HETERO JUNCTION FET |
NEC |
| 1131 |
NE70083 |
80 GHz, low noise Ku-K band GaAs MESFET |
NEC |
| 1132 |
NE70083-4 |
80 GHz, low noise Ku-K band GaAs MESFET |
NEC |
| 1133 |
NE71083 |
90 GHz, low noise Ku-K band GaAs MESFET |
NEC |
| 1134 |
NE71083-06 |
90 GHz, low noise Ku-K band GaAs MESFET |
NEC |
| 1135 |
NE71083-07 |
90 GHz, low noise Ku-K band GaAs MESFET |
NEC |
| 1136 |
NE71083-08 |
90 GHz, low noise Ku-K band GaAs MESFET |
NEC |
| 1137 |
NE76083A |
90 GHz, low noise Ku-K band GaAs MESFET |
NEC |
| 1138 |
NTE3083 |
Optoisolator NPN Darlington Transistor Output |
NTE Electronics |
| 1139 |
NTE5083A |
Zener diode, 1 watt, +-5% tolerance. Nominal zener voltage Vz = 28V. Zener test current Izt = 9.0mA. |
NTE Electronics |
| 1140 |
NTE6083 |
Schottky Barrier Rectifier |
NTE Electronics |
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