| No. |
Part Name |
Description |
Manufacturer |
| 1111 |
JAN2N5660 |
NPN Transistor |
Microsemi |
| 1112 |
JAN2N5660U3 |
NPN Transistor |
Microsemi |
| 1113 |
JANTX1N5660 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 1114 |
JANTX1N5660A |
Transient Voltage Suppressor |
Microsemi |
| 1115 |
JANTX1N6660 |
Schottky Rectifier |
Microsemi |
| 1116 |
JANTX2N5660 |
NPN Transistor |
Microsemi |
| 1117 |
JANTX2N5660U3 |
NPN Transistor |
Microsemi |
| 1118 |
JANTXV1N5660 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 1119 |
JANTXV1N5660A |
Transient Voltage Suppressor |
Microsemi |
| 1120 |
JANTXV1N6660 |
Schottky Rectifier |
Microsemi |
| 1121 |
JANTXV2N5660 |
NPN Transistor |
Microsemi |
| 1122 |
JANTXV2N5660U3 |
NPN Transistor |
Microsemi |
| 1123 |
JV1N6660CCT1 |
35A 45V Hi-Rel Schottky Common Cathode Diode in a TO-254AA package DLA Number 1N6660CCT1 |
International Rectifier |
| 1124 |
JV1N6660CCT1 |
35A 45V Hi-Rel Schottky Common Cathode Diode in a TO-254AA package DLA Number 1N6660CCT1 |
International Rectifier |
| 1125 |
JV1N6660DT1 |
25A 45V Hi-Rel Schottky Doubler Diode in a TO-254AA package DLA Number 1N6660DT1 |
International Rectifier |
| 1126 |
JV1N6660DT1 |
25A 45V Hi-Rel Schottky Doubler Diode in a TO-254AA package DLA Number 1N6660DT1 |
International Rectifier |
| 1127 |
K4E660411D, K4E640411D |
16MB x 4bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 1128 |
K4E660412D |
16M x 4bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 1129 |
K4E660412D, K4E640412D |
16MB x 4bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 1130 |
K4E660412D, K4E640412D |
16MB x 4bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 1131 |
K4E660412D-JC_L |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 8K refresh cycle. |
Samsung Electronic |
| 1132 |
K4E660412D-TC_L |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 8K refresh cycle. |
Samsung Electronic |
| 1133 |
K4E660412E, K4E640412E |
16M x 4bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 1134 |
K4E660412E, K4E640412E |
16M x 4bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 1135 |
K4E660811D, K4E640811D |
8M x 8bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 1136 |
K4E660812B |
8M x 8bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 1137 |
K4E660812B-JC-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
| 1138 |
K4E660812B-JC-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
| 1139 |
K4E660812B-JC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 1140 |
K4E660812B-JCL-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
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