No. |
Part Name |
Description |
Manufacturer |
1111 |
IS62LV12816LL-70TI |
70ns; 2.7-3.6V; 128K x 16 low voltage, ultra low-power CMOS static RAM |
ICSI |
1112 |
IS62LV12816LL-70TI |
128K x 16 CMOS static RAM |
Integrated Silicon Solution Inc |
1113 |
IS62LV1288LL-70T |
128K x 8 low power and low Vcc CMOS static RAM |
Integrated Silicon Solution Inc |
1114 |
IS62LV1288LL-70TI |
128K x 8 low power and low Vcc CMOS static RAM |
Integrated Silicon Solution Inc |
1115 |
IS62LV256-70T |
70ns; 3.3V; 32K x 8 low voltage static RAM |
ICSI |
1116 |
IS62LV256-70T |
32K x 8 LOW VOLTAGE STATIC RAM |
Integrated Silicon Solution Inc |
1117 |
IS62LV256-70TI |
70ns; 3.3V; 32K x 8 low voltage static RAM |
ICSI |
1118 |
IS62LV256-70TI |
32K x 8 LOW VOLTAGE STATIC RAM |
Integrated Silicon Solution Inc |
1119 |
IS62LV25616LL-70T |
256K x 16 low voltage, ultra low power CMOS static RAM |
Integrated Silicon Solution Inc |
1120 |
IS62LV25616LL-70TI |
256K x 16 low voltage, ultra low power CMOS static RAM |
Integrated Silicon Solution Inc |
1121 |
IS62LV2568ALL-70T |
256K x 16 low power and low Vcc CMOS static RAM |
Integrated Silicon Solution Inc |
1122 |
IS62LV2568ALL-70TI |
256K x 16 low power and low Vcc CMOS static RAM |
Integrated Silicon Solution Inc |
1123 |
IS62LV2568L-70T |
70ns; 2.7-3.6V; 256K x 8 low-power and low Vcc CMOS static RAM |
ICSI |
1124 |
IS62LV2568L-70TI |
70ns; 2.7-3.6V; 256K x 8 low-power and low Vcc CMOS static RAM |
ICSI |
1125 |
IS62LV2568LL-70T |
256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM |
Integrated Silicon Solution Inc |
1126 |
IS62LV2568LL-70TI |
256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM |
Integrated Silicon Solution Inc |
1127 |
IS62VV25616L-70T |
256K x 16 low voltage, 1.8V ultra-low power CMOS static RAM |
Integrated Silicon Solution Inc |
1128 |
IS62VV25616L-70TI |
256K x 16 low voltage, 1.8V ultra-low power CMOS static RAM |
Integrated Silicon Solution Inc |
1129 |
IS62VV25616LL-70T |
256K x 16 low voltage, 1.8V ultra-low power CMOS static RAM |
Integrated Silicon Solution Inc |
1130 |
IS62VV25616LL-70TI |
256K x 16 low voltage, 1.8V ultra-low power CMOS static RAM |
Integrated Silicon Solution Inc |
1131 |
IS62WV12816ALL-70T |
128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM |
Integrated Silicon Solution Inc |
1132 |
IS62WV12816ALL-70TI |
128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM |
Integrated Silicon Solution Inc |
1133 |
IST970T |
6V, 50mA ISO-logic buffer schmitt trigger interrupter switch |
ISOCOM |
1134 |
JAN2N6770T1 |
N-Channel |
Microsemi |
1135 |
JANSF2N7470T1 |
60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254 Low-Ohmic package |
International Rectifier |
1136 |
JANTX2N6770T1 |
N-Channel |
Microsemi |
1137 |
JANTXV2N6770T1 |
N-Channel |
Microsemi |
1138 |
KT870T11 |
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02inches SQ, leads. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
1139 |
KT870T15 |
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02inches SQ, leads. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
1140 |
KT870T51 |
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02inches SQ, leads. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
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