| No. |
Part Name |
Description |
Manufacturer |
| 1111 |
BDX54C |
Silicon epitaxial-base PNP transistor in monolithic Darlington configuration |
SGS-ATES |
| 1112 |
BDX85 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1113 |
BDX85A |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1114 |
BDX85B |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1115 |
BDX85C |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1116 |
BDX86 |
Silicon epitaxial-base PNP power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1117 |
BDX86A |
Silicon epitaxial-base PNP power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1118 |
BDX86B |
Silicon epitaxial-base PNP power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1119 |
BDX86C |
Silicon epitaxial-base PNP power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1120 |
BDX87 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1121 |
BDX87A |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1122 |
BDX87B |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1123 |
BDX87C |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1124 |
BDX88 |
Silicon epitaxial-base PNP power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1125 |
BDX88A |
Silicon epitaxial-base PNP power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1126 |
BDX88B |
Silicon epitaxial-base PNP power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1127 |
BDX88C |
Silicon epitaxial-base PNP power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1128 |
BF420A |
Silicon NPN Epitaxial Planar Transistor, letter A specifies the fact that have EBC lead configuration |
IPRS Baneasa |
| 1129 |
BF421A |
Silicon PNP Epitaxial Planar Transistor, letter A specifies the fact that have EBC lead configuration |
IPRS Baneasa |
| 1130 |
BF422A |
Silicon NPN Epitaxial Planar Transistor, letter A specifies the fact that have EBC lead configuration |
IPRS Baneasa |
| 1131 |
BF423A |
Silicon PNP Epitaxial Planar Transistor, letter A specifies the fact that have EBC lead configuration |
IPRS Baneasa |
| 1132 |
BGX50A |
General Purpose Diodes - Silicon Switching Diode Array with bridge configuration |
Infineon |
| 1133 |
BGX50A |
Silicon Switching Diode Array (Bridge configuration High-speed switch diode chip) |
Siemens |
| 1134 |
BXY42BA-3 |
Silicon PIN Diode (Fast switching In stripline package other lead configurations available) |
Siemens |
| 1135 |
C5-5 |
Thick Film Conformal Coated |
International Resistive |
| 1136 |
CAT34AC02 |
SMBus EEPROM for ACR Card Configuration, 2Kb |
Catalyst Semiconductor |
| 1137 |
CAT34ACO2 |
SMBus EEPROM for ACR Card Configuration, 2Kb |
Catalyst Semiconductor |
| 1138 |
CAT523J-TE13 |
Configured digitally programmable potentiometer (DPP) |
Catalyst Semiconductor |
| 1139 |
CAT523JI-TE13 |
Configured digitally programmable potentiometer (DPP) |
Catalyst Semiconductor |
| 1140 |
CAT523P-TE13 |
Configured digitally programmable potentiometer (DPP) |
Catalyst Semiconductor |
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