| No. |
Part Name |
Description |
Manufacturer |
| 1111 |
AM3135-007 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 1112 |
AM3135-014 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 1113 |
AM3135-025 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 1114 |
AM3135-035 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 1115 |
AM3135-045 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 1116 |
AM3135-25N |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 1117 |
AM80610-018 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 620-960MHz |
SGS Thomson Microelectronics |
| 1118 |
AM80610-050 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 750-960MHz |
SGS Thomson Microelectronics |
| 1119 |
AM81416-006 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 1120 |
AM81416-012 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 1121 |
AM81416-020 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 1122 |
AM82223-004 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 1123 |
AM82223-012 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 1124 |
AM82223-014 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 1125 |
AM82223-018 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 1126 |
AM82223-020 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 1127 |
AM82324-020 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz |
SGS Thomson Microelectronics |
| 1128 |
AM82325-040 |
High power silicon NPN bipolar device optimized for specialized pulsed applications in the 2.3-2.5GHz |
SGS Thomson Microelectronics |
| 1129 |
AM82327-004 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 1130 |
AM82327-006 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 1131 |
AM82327-010 |
Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 1132 |
AM82327-015 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 1133 |
AM82729-030 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 1134 |
AM82729-060 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 1135 |
AM82731-001 |
Medium Power Silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
| 1136 |
AM82731-075 |
High Power Silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 1137 |
AM82931-055 |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 1138 |
AM82931-055N |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 1139 |
AM82931-055S |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 1140 |
AM83135-003 |
Medium power silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
| | | |
