| No. |
Part Name |
Description |
Manufacturer |
| 1111 |
NTHD4N02FT1G |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™ |
ON Semiconductor |
| 1112 |
NTHD4P02 |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
| 1113 |
NTHD4P02F |
Power MOSFET and Schottky Diode |
ON Semiconductor |
| 1114 |
NTHD4P02FT1 |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
| 1115 |
NTHD4P02FT1G |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
| 1116 |
NTLGF3402P |
Power MOSFET and Schottky Diode, -20 V, -3.9 A, P-Channel |
ON Semiconductor |
| 1117 |
NTLJD3182FZ |
Power MOSFET and Schottky Diode, −20 V, −4.0 A, uCool¿, Single P−Channel & Schottky Barrier Diode, ESD |
ON Semiconductor |
| 1118 |
NTLJF1103P |
Power MOSFET and Schottky Diode -8 V, -4.3 A, µCool¿ P-Channel, with 2.0 A Schottky Barrier Diode, 2 x 2 mm, WDFN |
ON Semiconductor |
| 1119 |
NTLJF3117P |
Power MOSFET and Schottky Diode, -20 V, -4.1 A, P-Channel |
ON Semiconductor |
| 1120 |
NTLJF3118N |
Power MOSFET and Schottky Diode 20 V, 4.6 A, µCool™ N-Channel, with 2.0 A Schottky Barrier Diode |
ON Semiconductor |
| 1121 |
NTLJF4156N |
Power MOSFET and Schottky Diode, 30 V, 4.6 A, N-Channel |
ON Semiconductor |
| 1122 |
NTLLD4901NF |
Power MOSFET and Integrated Schottky Diode, 30 V, Dual N-Channel |
ON Semiconductor |
| 1123 |
NTMD4184PF |
Power MOSFET and Schottky Diode, -30 V, -4.0 A, Single P-Channel |
ON Semiconductor |
| 1124 |
NTMD4884NF |
Power MOSFET and Schottky Diode, 30 V, 5.7 A, Single N-Channel |
ON Semiconductor |
| 1125 |
NTMFD4901NF |
Power MOSFET and Integrated Schottky Diode, 30 V, Dual N-Channel |
ON Semiconductor |
| 1126 |
NTMFD4902NF |
Power MOSFET and Integrated Schottky Diode, 30 V, Dual N-Channel |
ON Semiconductor |
| 1127 |
NTMSD2P102LR2-D |
FETKY E Power MOSFET and Schottky Diode Dual SO-8 Package |
ON Semiconductor |
| 1128 |
NTMSD3P102 |
P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package |
ON Semiconductor |
| 1129 |
NTMSD3P102R2 |
P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package |
ON Semiconductor |
| 1130 |
NTMSD3P102R2-D |
FETKY P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package |
ON Semiconductor |
| 1131 |
NTMSD3P303 |
FETKY™ P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package |
ON Semiconductor |
| 1132 |
NTMSD3P303R2 |
FETKY™ P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package |
ON Semiconductor |
| 1133 |
NTMSD3P303R2-D |
FETKY E P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package |
ON Semiconductor |
| 1134 |
NTS8100MFS |
Very Low Forward Voltage Trench-Based Schottky Rectifier |
ON Semiconductor |
| 1135 |
NTSJ2080CT |
Very Low Forward Voltage Trench-based Schottky Rectifier |
ON Semiconductor |
| 1136 |
NTSJ3080CT |
Very Low Forward Voltage Trench-based Schottky Rectifier |
ON Semiconductor |
| 1137 |
NTSJ30U80CT |
Very Low Forward Voltage Trench-based Schottky Rectifier |
ON Semiconductor |
| 1138 |
NTST20120CT |
Very Low Forward Voltage Trench-based Schottky Rectifier |
ON Semiconductor |
| 1139 |
NTST20U100CT |
Very Low Forward Voltage Trench-Based Schottky Rectifier |
ON Semiconductor |
| 1140 |
NTST30100S |
30A, 100V Very Low Forward Voltage Trench-based Schottky Rectifier |
ON Semiconductor |
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