| No. |
Part Name |
Description |
Manufacturer |
| 1111 |
BDX64A |
16A peak complementary darlington silicon power PNP transistor 117W |
Motorola |
| 1112 |
BDX64B |
16A peak complementary darlington silicon power PNP transistor 117W |
Motorola |
| 1113 |
BDX64C |
16A peak complementary darlington silicon power PNP transistor 117W |
Motorola |
| 1114 |
BDX65 |
16A peak complementary darlington silicon power NPN transistor 117W |
Motorola |
| 1115 |
BDX65A |
16A peak complementary darlington silicon power NPN transistor 117W |
Motorola |
| 1116 |
BDX65B |
16A peak complementary darlington silicon power NPN transistor 117W |
Motorola |
| 1117 |
BDX65C |
16A peak complementary darlington silicon power NPN transistor 117W |
Motorola |
| 1118 |
BDX66 |
16A Darlington power PNP transistors complementary silicon 150W |
Motorola |
| 1119 |
BDX66A |
16A Darlington power PNP transistors complementary silicon 150W |
Motorola |
| 1120 |
BDX66B |
16A Darlington power PNP transistors complementary silicon 150W |
Motorola |
| 1121 |
BDX66C |
16A Darlington power PNP transistors complementary silicon 150W |
Motorola |
| 1122 |
BDX67 |
16A Darlington power NPN transistors complementary silicon 150W |
Motorola |
| 1123 |
BDX67A |
16A Darlington power NPN transistors complementary silicon 150W |
Motorola |
| 1124 |
BDX67B |
16A Darlington power NPN transistors complementary silicon 150W |
Motorola |
| 1125 |
BDX67C |
16A Darlington power NPN transistors complementary silicon 150W |
Motorola |
| 1126 |
BDY80 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary BDY82 |
SESCOSEM |
| 1127 |
BDY81 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary BDY83 |
SESCOSEM |
| 1128 |
BDY82 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary BDY80 |
SESCOSEM |
| 1129 |
BDY83 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary BDY81 |
SESCOSEM |
| 1130 |
BF469 |
2.000W Medium Power NPN Plastic Leaded Transistor. 250V Vceo, 0.030A Ic, 50 hFE. Complementary BF470 |
Continental Device India Limited |
| 1131 |
BF470 |
2.000W Medium Power PNP Plastic Leaded Transistor. 250V Vceo, 0.030A Ic, 50 hFE. Complementary BF469 |
Continental Device India Limited |
| 1132 |
BF471 |
2.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.030A Ic, 50 hFE. Complementary BF472 |
Continental Device India Limited |
| 1133 |
BF472 |
2.000W Medium Power PNP Plastic Leaded Transistor. 300V Vceo, 0.030A Ic, 50 hFE. Complementary BF471 |
Continental Device India Limited |
| 1134 |
BF820 |
0.250W High Voltage NPN SMD Transistor. V Vceo, 0.050A Ic, 50 hFE. Complementary BF821 |
Continental Device India Limited |
| 1135 |
BF821 |
0.250W High Voltage PNP SMD Transistor. V Vceo, 0.050A Ic, 50 hFE. Complementary BF820 |
Continental Device India Limited |
| 1136 |
BF822 |
0.250W High Voltage NPN SMD Transistor. 250V Vceo, 0.050A Ic, 50 hFE. Complementary BF823 |
Continental Device India Limited |
| 1137 |
BF823 |
0.250W High Voltage PNP SMD Transistor. 250V Vceo, 0.050A Ic, 50 hFE. Complementary BF822 |
Continental Device India Limited |
| 1138 |
BSO612CV |
Low Voltage MOSFETs - SIPMOS, Complementary, 60V, SO-8, RDSon(N/P) = 0.12/0.30Ohm, Id(N) = 3.1A, Id(P) = -2.0A, NL |
Infineon |
| 1139 |
BSO615C |
Low Voltage MOSFETs - SIPMOS, Complementary, 60V, SO-8, RDSon(N/P) = 0.11/0.30Ohm, Id(N) = 3.2A, Id(P) = -2.0A, LL |
Infineon |
| 1140 |
BSS8402DW-13-F |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET |
Diodes |
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