| No. |
Part Name |
Description |
Manufacturer |
| 1111 |
2SA15H |
Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier |
Hitachi Semiconductor |
| 1112 |
2SA17H |
Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 1113 |
2SA18H |
Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 1114 |
2SA1946 |
500mW SMD PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5212 |
Isahaya Electronics Corporation |
| 1115 |
2SA1995 |
450mW Lead frame PNP transistor, maximum rating: -50V Vceo, -100mA Ic, 120 to 560 hFE. |
Isahaya Electronics Corporation |
| 1116 |
2SA1998 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -2A Ic, 150 to 500 hFE. |
Isahaya Electronics Corporation |
| 1117 |
2SA2002 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5485 |
Isahaya Electronics Corporation |
| 1118 |
2SA2012 |
Bipolar Transistor, -30V, -5A, Low VCE(sat) PNP Single PCP |
ON Semiconductor |
| 1119 |
2SA429G |
Silicon NPN triple diffused planar transistor, Nixie Tube Driver applications, high voltage Switching applications |
TOSHIBA |
| 1120 |
2SA495G |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
| 1121 |
2SA499 |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
| 1122 |
2SA500 |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
| 1123 |
2SA502 |
Silicon PNP epitaxial planar transistor, fluorescent numerical indicator tube drive applications |
TOSHIBA |
| 1124 |
2SA509 |
Silicon PNP epitaxial planar medium power transistor, complementary to 2SC509 |
TOSHIBA |
| 1125 |
2SA509G |
Silicon PNP epitaxial planar medium power transistor, complementary to 2SC509G |
TOSHIBA |
| 1126 |
2SA52 |
Germanium PNP alloy junction transistor, AM Frequency Converter Applications |
TOSHIBA |
| 1127 |
2SA537AH |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
| 1128 |
2SA537H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
| 1129 |
2SA548H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching, RF Amplifier |
Hitachi Semiconductor |
| 1130 |
2SA549AH |
Silicon PNP Triple Diffused Planar Transistor, intended for use in High Speed Switching, Indicater Tube Driver |
Hitachi Semiconductor |
| 1131 |
2SA561 |
Silicon PNP epitaxial planar transistor, complementary to 2SC734 |
TOSHIBA |
| 1132 |
2SA565 |
Silicon PNP Epitaxial Planar Transistor, intended for use in HiFi AMP. Driver, Power Output |
Hitachi Semiconductor |
| 1133 |
2SA566 |
Silicon PNP Epitaxial Planar Transistor, intended for use in HiFi AMP. Driver, Power Output |
Hitachi Semiconductor |
| 1134 |
2SA661 |
Silicon PNP epitaxial planar transistor, complementary to 2SC1166 |
TOSHIBA |
| 1135 |
2SA812R |
PNP silicon epitaxial transistor, audio frequency |
NEC |
| 1136 |
2SA940 |
Silicon PNP triple diffused power transistor, complementary to 2SC2073 |
TOSHIBA |
| 1137 |
2SA962A |
Silicon PNP epitaxial power transistor, complementary 2SC2194A |
TOSHIBA |
| 1138 |
2SA968 |
Silicon PNP epitaxial power transistor, complementary 2SC2238 |
TOSHIBA |
| 1139 |
2SA969A |
Silicon PNP epitaxial power transistor, complementary 2SC2238A |
TOSHIBA |
| 1140 |
2SB1035 |
900mW Lead frame PNP transistor, maximum rating: -25V Vceo, -1A Ic, 55 to 300 hFE. Complementary 2SD1447 |
Isahaya Electronics Corporation |
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