No. |
Part Name |
Description |
Manufacturer |
1111 |
BAT64-05 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
1112 |
BAT64-05W |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
1113 |
BAT64-06 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
1114 |
BAT64-06W |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
1115 |
BAT64-07 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
1116 |
BAT64-07W |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
1117 |
BAT64-W |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
1118 |
BAT64W |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
1119 |
BBY24 |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
1120 |
BBY24 |
Junction varactors for tuning and modulation, datasheet in german language |
Siemens |
1121 |
BBY25 |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
1122 |
BBY25 |
Junction varactors for tuning and modulation, datasheet in german language |
Siemens |
1123 |
BBY26 |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
1124 |
BBY26 |
Junction varactors for tuning and modulation, datasheet in german language |
Siemens |
1125 |
BBY27 |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
1126 |
BBY27 |
Junction varactors for tuning and modulation, datasheet in german language |
Siemens |
1127 |
BBY32CB |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
1128 |
BBY32DA |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
1129 |
BBY32DB |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
1130 |
BBY32EA |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
1131 |
BBY32FA |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
1132 |
BCM4500 |
Advanced Modulation Satellite Receiver |
Broadcom |
1133 |
BCM94500 |
Advanced Modulation Satellite Receiver Evaluation System |
Broadcom |
1134 |
BF357S |
Epitaxial planar NPN transistor, very low noise, high gain and good intermodulation properties |
SGS-ATES |
1135 |
BF997 |
Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations) |
Siemens |
1136 |
BFQ23 |
Silicon wideband PNP transistor, intended for use in UHF and microwave amplifiers, low intermodulation distorsion and high power gain |
Philips |
1137 |
BFR94 |
NPN resistance-stabilizer transistor in a SOT-48 capstan envelope, very low cross modulation, intermodulation and second harmonic distortion |
Philips |
1138 |
BFR94 |
NPN resistance-stabilizer transistor in a SOT-48 capstan envelope, very low cross modulation, intermodulation and second harmonic distortion |
Philips |
1139 |
BFW92 |
NPN high-frequency transistor, low noise over a wide current range, very high power gain and good intermodulation |
Philips |
1140 |
BH7673G |
Video Isolation Amplifier |
ROHM |
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