| No. |
Part Name |
Description |
Manufacturer |
| 1111 |
2SC2539 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 1112 |
2SC2540 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 1113 |
2SC2543 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 1114 |
2SC2544 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 1115 |
2SC2545 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 1116 |
2SC2546 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 1117 |
2SC2547 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 1118 |
2SC2550 |
Silicon NPN Epitaxial type transistor (PCT Process) for industrial applications |
TOSHIBA |
| 1119 |
2SC2551 |
Transistor Silicon NPN Epitaxial Type (PCT process) Hight Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
| 1120 |
2SC2561 |
Si NPN epitaxial planar. RF amplifier. |
Panasonic |
| 1121 |
2SC2562 |
Silicon NPN epitaxial high-current switching transistor |
TOSHIBA |
| 1122 |
2SC2563 |
Silicon NPN epitaxial audio frequency power transistor |
TOSHIBA |
| 1123 |
2SC2564 |
Silicon NPN epitaxial power transistor, complementary to 2SA1094 |
TOSHIBA |
| 1124 |
2SC2565 |
Silicon NPN epitaxial power transistor, complementary to 2SA1095 |
TOSHIBA |
| 1125 |
2SC2570A |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 1126 |
2SC2570A-T |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 1127 |
2SC2591 |
Transistor - Silicon NPN Epitaxial Planar Type |
Panasonic |
| 1128 |
2SC2592 |
Transistor - Silicon NPN Epitaxial Planar Type |
Panasonic |
| 1129 |
2SC2609 |
NPN epitaxial planar RF power VHF transistor 100W 28V |
Mitsubishi Electric Corporation |
| 1130 |
2SC2618 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 1131 |
2SC2619 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 1132 |
2SC2620 |
Silicon NPN Epitaxial Planar |
Hitachi Semiconductor |
| 1133 |
2SC2633 |
Transistor - Silicon NPN Epitaxial Planar Type |
Panasonic |
| 1134 |
2SC2644 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Wideband Amplifier Applications (fT=4GHz) |
TOSHIBA |
| 1135 |
2SC2652 |
V(cbo): 85V; V(ces): 85V; V(ceo): 55V; V(ebo): 4V; 20A; 300W; silicon NPN epitaxial planar transistor. For 2-30 MHz SSB linear power amplifier applications |
TOSHIBA |
| 1136 |
2SC2655 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 1137 |
2SC2668 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications FM, RF, IF Amplifier Applications |
TOSHIBA |
| 1138 |
2SC2669 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications |
TOSHIBA |
| 1139 |
2SC2670 |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications |
TOSHIBA |
| 1140 |
2SC2671 |
Silicon NPN epitaxial planer type(For UHF band low-noise amplification) |
Panasonic |
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