| No. |
Part Name |
Description |
Manufacturer |
| 1111 |
2SC3064 |
NPN Epitaxial Planar Silicon CompositeTransistor |
SANYO |
| 1112 |
2SC3065 |
NPN Epitaxial Planar Silicon CompositeTransistor |
SANYO |
| 1113 |
2SC3067 |
NPN Epitaxial Planar Silicon Transistor DIFFERENTIAL AMP APPLICATIONS |
SANYO |
| 1114 |
2SC3068 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 1115 |
2SC3069 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 1116 |
2SC3070 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 1117 |
2SC3071 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 1118 |
2SC3072 |
Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 1119 |
2SC3073 |
SILICON NPN EPITAXIAL TYPE(PCT PROCESS) |
TOSHIBA |
| 1120 |
2SC3074 |
Transistor Silicon NPN Epitaxial Type (PCT process) High Current Switching Applications |
TOSHIBA |
| 1121 |
2SC3076 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 1122 |
2SC3098 |
Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier Applications |
TOSHIBA |
| 1123 |
2SC3099 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 1124 |
2SC3101 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 1125 |
2SC3102 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 1126 |
2SC3103 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 1127 |
2SC3104 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 1128 |
2SC3105 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 1129 |
2SC3110 |
Si NPN epitaxial planar. RF wide band low-noise amplifier. |
Panasonic |
| 1130 |
2SC3110 |
Si NPN Epitaxial Planar |
Unknow |
| 1131 |
2SC3112 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier and Switching Applications |
TOSHIBA |
| 1132 |
2SC3113 |
Transistor Silicon NPN Epitaxial Type For Audio Amplifier and Switching Applications |
TOSHIBA |
| 1133 |
2SC3114 |
NPN Epitaxial Planar Silicon Transistors High-Vebo, AF Amp Applications |
SANYO |
| 1134 |
2SC3116 |
NPN Epitaxial Planar Silicon Transistors 160V/700mA Switching Applications |
SANYO |
| 1135 |
2SC3117 |
NPN Epitaxial Planar Silicon Transistors 160V/1.5A Switching Applications |
SANYO |
| 1136 |
2SC3119 |
Silicon NPN epitaxial transistor |
TOSHIBA |
| 1137 |
2SC3121 |
Transistor Silicon NPN Epitaxial Planar Type TV Tuner, UHF Oscillator Applications (common base) TV Tuner, UHF Converter Applications (common base) |
TOSHIBA |
| 1138 |
2SC3122 |
Transistor Silicon NPN Epitaxial Planar Type TV VHF RF Amplifier Applications |
TOSHIBA |
| 1139 |
2SC3123 |
Transistor Silicon NPN Epitaxial Planar Type TV VHF Mixer Applications |
TOSHIBA |
| 1140 |
2SC3124 |
Transistor Silicon NPN Epitaxial Planar Type TV Tuner, VHF Oscillator Applications |
TOSHIBA |
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