| No. |
Part Name |
Description |
Manufacturer |
| 1111 |
MFE3007 |
N-Channel Dual-Gate Silicon-Nitride Passivated MOS Field-Effect Transistor Type B, designed for VHF amplifiers and mixer applications |
Motorola |
| 1112 |
MICROMUX |
A Two-wire data acquisition system - with ASCII computer interface - designed for tough environments |
Burr Brown |
| 1113 |
MJ2955 |
PNP High power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc Ic = 15Adc, PD = 115W. |
USHA India LTD |
| 1114 |
MJ3029 |
NPN power transistor designed for horizontal and vertical deflection amplifier circuits for TV |
Motorola |
| 1115 |
MJ3030 |
NPN power transistor designed for horizontal and vertical deflection amplifier circuits for TV |
Motorola |
| 1116 |
MJ3201 |
High-voltage NPN silicon transistor designed for use in line-operated equipment |
Motorola |
| 1117 |
MJ3202 |
High-voltage NPN silicon transistor designed for use in line-operated equipment |
Motorola |
| 1118 |
MJ400 |
High-voltage NPN silicon transistor designed for video output circuitry in color television receivers |
Motorola |
| 1119 |
MJ420 |
NPN silicon high-voltage transistor designed for video output circuitry in transistorized television receivers |
Motorola |
| 1120 |
MJ421 |
NPN silicon high-voltage transistor designed for video output circuitry in transistorized television receivers |
Motorola |
| 1121 |
MJE2955T |
PNP, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc Ic = 10Adc, PD = 75W. |
USHA India LTD |
| 1122 |
MJE3055T |
NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W. |
USHA India LTD |
| 1123 |
MJE340 |
NPN silicon power transistor designed for power output stages for television, radio, phonograph and other consumer product applications |
Motorola |
| 1124 |
MM1500 |
NPN silicon RF power transistor designed for UHF amplifier, frequency multiplier and oscillator applications |
Motorola |
| 1125 |
MM1500A |
NPN Silicon RF Power Transistor designed for UHF amplifier, frequency multiplier, and oscillator applications |
Motorola |
| 1126 |
MM1501 |
NPN silicon RF power transistor designed for UHF amplifier, frequency multiplier and oscillator applications |
Motorola |
| 1127 |
MM1549 |
NPN silicon RF power transistor designed for VHF/UHF amplifier applications, ideal for 225-400MHz communications equipment |
Motorola |
| 1128 |
MM1550 |
NPN silicon RF power transistor designed for VHF/UHF amplifier applications, ideal for 225-400MHz communications equipment |
Motorola |
| 1129 |
MM1551 |
NPN silicon RF power transistor designed for VHF/UHF amplifier applications, ideal for 225-400MHz communications equipment |
Motorola |
| 1130 |
MM1557 |
NPN silicon RF power transistor designed for power amplifier or oscillator applications in military and industrial equipment |
Motorola |
| 1131 |
MM1558 |
NPN silicon RF power transistor designed for power amplifier or oscillator applications in military and industrial equipment |
Motorola |
| 1132 |
MM1559 |
NPN silicon RF power transistor designed for power amplifier or oscillator applications in military and industrial equipment |
Motorola |
| 1133 |
MM1603 |
NPN silicon RF Power Transistor designed for amplifier or oscillator applications in military and industrial equipment, 25W Power Output at 13,6V |
Motorola |
| 1134 |
MM1748 |
NPN silicon annular transistor designed for ultra-high speed switching applications |
Motorola |
| 1135 |
MM1812 |
NPN silicon transistor designed for audio power amplifier applications up to 1 watt output |
Motorola |
| 1136 |
MM2258 |
NPN silicon transistor designed for video output circuitry in transistorized television receivers |
Motorola |
| 1137 |
MM2259 |
NPN silicon transistor designed for video output circuitry in transistorized television receivers |
Motorola |
| 1138 |
MM2260 |
NPN silicon transistor designed for video output circuitry in transistorized television receivers |
Motorola |
| 1139 |
MM2483 |
NPN silicon epitaxial transistor designed for low-level, low-noise amplifier applications, collector connected to case |
Motorola |
| 1140 |
MM2484 |
NPN silicon epitaxial transistor designed for low-level, low-noise amplifier applications, collector connected to case |
Motorola |
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