| No. |
Part Name |
Description |
Manufacturer |
| 1111 |
2SC5176 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS. |
TOSHIBA |
| 1112 |
2SC5177 |
NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 1113 |
2SC5178 |
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 1114 |
2SC5178-T1 |
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 1115 |
2SC5178-T2 |
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 1116 |
2SC5179 |
NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 1117 |
2SC5179-T1 |
NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 1118 |
2SC5179-T2 |
NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 1119 |
2SC5180 |
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 1120 |
2SC5181 |
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 1121 |
2SC5181-T1 |
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 1122 |
2SC5183 |
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 1123 |
2SC5183-T1 |
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 1124 |
2SC5183-T2 |
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 1125 |
2SC5184 |
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 1126 |
2SC5184-T1 |
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 1127 |
2SC5184-T2 |
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 1128 |
2SC5185 |
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 1129 |
2SC5185-T1 |
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 1130 |
2SC5185-T2 |
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 1131 |
2SC5186 |
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 1132 |
2SC5186-T1 |
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 1133 |
2SC5200 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 1134 |
2SC5209 |
FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 1135 |
2SC5214 |
For Low Frequency Amplify Application Silicon Npn Epitaxial Type |
Isahaya Electronics Corporation |
| 1136 |
2SC5218 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 1137 |
2SC5225 |
Silicon NPN Epitaxial Transistor |
Hitachi Semiconductor |
| 1138 |
2SC5226 |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications |
SANYO |
| 1139 |
2SC5227 |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications |
SANYO |
| 1140 |
2SC5228 |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications |
SANYO |
| | | |
