| No. |
Part Name |
Description |
Manufacturer |
| 1111 |
1SV251 |
PIN Diode for VHF, UHF, AGC Applications |
SANYO |
| 1112 |
1SV252 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications |
TOSHIBA |
| 1113 |
1SV263 |
Pin Diode for VHF, UHF, AGC Applications |
SANYO |
| 1114 |
1SV264 |
Pin Diode for VHF, UHF, AGC Applications |
SANYO |
| 1115 |
1SV265 |
PIN Diode for VHF, UHF, AGC Applications |
SANYO |
| 1116 |
1SV266 |
PIN Diode for VHF, UHF, AGC Applications |
SANYO |
| 1117 |
1SV267 |
PIN Diode for VHF, UHF, AGC Applications |
SANYO |
| 1118 |
1SV271 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications |
TOSHIBA |
| 1119 |
1SV283B |
Variable capacitance diode for electronic tuning applications |
TOSHIBA |
| 1120 |
1SV298 |
pi Type Attenuator Applications |
SANYO |
| 1121 |
1SV307 |
Diode Silicon Epitaxial Pin Type VHF Tuner Band Switch Applications |
TOSHIBA |
| 1122 |
1SV308 |
Diode Silicon Epitaxial Pin Type VHF Tuner Band Switch Applications |
TOSHIBA |
| 1123 |
1SV312 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications |
TOSHIBA |
| 1124 |
1SV77 |
Application Note - Features and applications |
NEC |
| 1125 |
1SV77 |
Application Note - Features and applications |
NEC |
| 1126 |
1ZB200-Y |
Zener diode for constant voltage regulation and transient suppressors applications |
TOSHIBA |
| 1127 |
1ZB200-Z |
Zener diode for constant voltage regulation and transient suppressors applications |
TOSHIBA |
| 1128 |
1ZB220-Y |
Zener diode for constant voltage regulation and transient suppressors applications |
TOSHIBA |
| 1129 |
1ZB220-Z |
Zener diode for constant voltage regulation and transient suppressors applications |
TOSHIBA |
| 1130 |
1ZB240-Y |
Zener diode for constant voltage regulation and transient suppressors applications |
TOSHIBA |
| 1131 |
1ZB240-Z |
Zener diode for constant voltage regulation and transient suppressors applications |
TOSHIBA |
| 1132 |
2001 |
2GHz 1W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 1133 |
2003 |
2GHz 3W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 1134 |
2005 |
2GHz 5W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 1135 |
200FXG13 |
DIODE(HIGHSPEEDRECTIFIERAPPLICATIONS) |
TOSHIBA |
| 1136 |
200FXH13 |
DIODE(HIGHSPEEDRECTIFIERAPPLICATIONS) |
TOSHIBA |
| 1137 |
2010 |
2GHz 10W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 1138 |
2023-1 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 1139 |
2023-16 |
2.0-2.3GHz 16W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 1140 |
2023-3 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| | | |
