| No. |
Part Name |
Description |
Manufacturer |
| 1111 |
2N2925T |
General Purpose Bipolar Transistor |
New Jersey Semiconductor |
| 1112 |
2N2944 |
PNP silicon annular transistor designed for low-level, high-speed chopper applications |
Motorola |
| 1113 |
2N2944A |
Chopper Transistor PNP Silicon |
Motorola |
| 1114 |
2N2945 |
PNP silicon annular transistor designed for low-level, high-speed chopper applications |
Motorola |
| 1115 |
2N2945A |
Chopper Transistor PNP Silicon |
Motorola |
| 1116 |
2N2946 |
PNP silicon annular transistor designed for low-level, high-speed chopper applications |
Motorola |
| 1117 |
2N2946A |
Chopper Transistor PNP Silicon |
Motorola |
| 1118 |
2N2947 |
NPN silicon annular transistor for power amplifier applications to 100MHz |
Motorola |
| 1119 |
2N2948 |
NPN silicon annular transistor for power amplifier applications to 100MHz |
Motorola |
| 1120 |
2N2949 |
NPN silicon annular transistors for power amplifier and driver applications to 100MHz, TO-107 case |
Motorola |
| 1121 |
2N2950 |
NPN silicon annular transistors for power amplifier and driver applications to 100MHz, TO-102 case |
Motorola |
| 1122 |
2N2951 |
NPN silicon annular Star transistor |
Motorola |
| 1123 |
2N2951 |
SEPT® NPN planar epitaxial silicon power transistor for amplifiers |
Sprague |
| 1124 |
2N2952 |
NPN silicon annular Star transistor |
Motorola |
| 1125 |
2N2952 |
SEPT® NPN planar epitaxial silicon power transistor for amplifiers |
Sprague |
| 1126 |
2N2958 |
NPN silicon annular Star transistor |
Motorola |
| 1127 |
2N2959 |
NPN silicon annular Star transistor |
Motorola |
| 1128 |
2N2972 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 1129 |
2N2973 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 1130 |
2N2974 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 1131 |
2N2975 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 1132 |
2N2976 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 1133 |
2N2977 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 1134 |
2N2978 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 1135 |
2N2979 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 1136 |
2N297A |
Germanium power transistor |
COSEM |
| 1137 |
2N297A |
PNP germanium power transistor for military and industrial power switching and amplifier applications |
Motorola |
| 1138 |
2N297A |
Germanium PNP Power Transistor, TO-3 Package |
Silicon Transistor Corporation |
| 1139 |
2N301 |
Germanium PNP Power Transistor, TO-3 Package |
Silicon Transistor Corporation |
| 1140 |
2N3010 |
NPN silicon low-power transistor |
Motorola |
| | | |
