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Datasheets for SE S

Datasheets found :: 7465
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No. Part Name Description Manufacturer
1111 BC263 PNP HIGH GAIN LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR Micro Electronics
1112 BC413 SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS Micro Electronics
1113 BC414 SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS Micro Electronics
1114 BC415 SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS Micro Electronics
1115 BC416 SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS Micro Electronics
1116 BD201 Epitaxial-base silicon N-P-N VERSAWATT transistor. 60V, 60W. General Electric Solid State
1117 BD201 EPITAXIAL BASE SILICON NPN AND PNP VERSAWATT TRANSISTORS General Semiconductor
1118 BD202 Epitaxial-base silicon P-N-P VERSAWATT transistor. -60V, 60W. General Electric Solid State
1119 BD202 EPITAXIAL BASE SILICON NPN AND PNP VERSAWATT TRANSISTORS General Semiconductor
1120 BD203 Epitaxial-base silicon N-P-N VERSAWATT transistor. 80V, 60W. General Electric Solid State
1121 BD203 EPITAXIAL BASE SILICON NPN AND PNP VERSAWATT TRANSISTORS General Semiconductor
1122 BD204 Epitaxial-base silicon P-N-P VERSAWATT transistor. -80V, 60W. General Electric Solid State
1123 BD204 EPITAXIAL BASE SILICON NPN AND PNP VERSAWATT TRANSISTORS General Semiconductor
1124 BD240 Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -55V, 30W. General Electric Solid State
1125 BD240A Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -70V, 30W. General Electric Solid State
1126 BD240B Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -90V, 30W. General Electric Solid State
1127 BD240C Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -115V, 30W. General Electric Solid State
1128 BD241 Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 55V, 40W. General Electric Solid State
1129 BD241A Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 70V, 40W. General Electric Solid State
1130 BD241A NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W USHA India LTD
1131 BD241B Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 90V, 40W. General Electric Solid State
1132 BD241B NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W USHA India LTD
1133 BD241C Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 115V, 40W. General Electric Solid State
1134 BD241C NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W USHA India LTD
1135 BD242 Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -55V, 40W. General Electric Solid State
1136 BD242A Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -70V, 40W. General Electric Solid State
1137 BD242A PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. USHA India LTD
1138 BD242B Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -90V, 40W. General Electric Solid State
1139 BD242B PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. USHA India LTD
1140 BD242C Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -115V, 40W. General Electric Solid State


Datasheets found :: 7465
Page: | 34 | 35 | 36 | 37 | 38 | 39 | 40 | 41 | 42 |



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