| No. |
Part Name |
Description |
Manufacturer |
| 1111 |
BQ24038RHLTG4 |
Dual Input Li-Ion Charger with Dynamic Power Path, Output regulated to 4.4V, Vbat 4.4V 20-VQFN -40 to 85 |
Texas Instruments |
| 1112 |
BQ24070 |
Li-Ion Charger with Dynamic Power-Path Management, Output regulated to 4.4V |
Texas Instruments |
| 1113 |
BQ24070RHLR |
Li-Ion Charger with Dynamic Power-Path Management, Output regulated to 4.4V 20-VQFN -40 to 85 |
Texas Instruments |
| 1114 |
BQ24070RHLRG4 |
Li-Ion Charger with Dynamic Power-Path Management, Output regulated to 4.4V 20-VQFN -40 to 85 |
Texas Instruments |
| 1115 |
BQ24070RHLT |
Li-Ion Charger with Dynamic Power-Path Management, Output regulated to 4.4V 20-VQFN -40 to 85 |
Texas Instruments |
| 1116 |
BQ24070RHLTG4 |
Li-Ion Charger with Dynamic Power-Path Management, Output regulated to 4.4V 20-VQFN -40 to 85 |
Texas Instruments |
| 1117 |
BQ24071 |
Li-Ion Charger with Dynamic Power-Path Management, Output regulated to 6V |
Texas Instruments |
| 1118 |
BQ24071RHLR |
Li-Ion Charger with Dynamic Power-Path Management, Output regulated to 6V 20-VQFN -40 to 85 |
Texas Instruments |
| 1119 |
BQ24071RHLT |
Li-Ion Charger with Dynamic Power-Path Management, Output regulated to 6V 20-VQFN -40 to 85 |
Texas Instruments |
| 1120 |
BSI |
Moulded and Insulated Wirewound Precision Power Resistors Axial Leads |
Vishay |
| 1121 |
BSM100GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 1122 |
BSM100GB120DN2K |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 1123 |
BSM100GB170DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 1124 |
BSM100GT120DN2 |
IGBT Power Module (Three single switches Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 1125 |
BSM150GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 1126 |
BSM150GB170DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 1127 |
BSM200GAL120DN2 |
IGBT Power Module (Single switch with chopper diode Package with insulated metal base plate) |
Siemens |
| 1128 |
BSM200GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 1129 |
BSM25GAL120DN2 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 1130 |
BSM25GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 1131 |
BSM400GB60DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 1132 |
BSM50GAL120DN2 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 1133 |
BSM50GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 1134 |
BSM50GB170DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 1135 |
BSM50GD120DN2E3226 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate) |
Siemens |
| 1136 |
BSM75GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 1137 |
BSM75GB170DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 1138 |
BSR33 |
SOT-89 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 1139 |
BSR43 |
SOT-89 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 1140 |
BSV81 |
Silicon n channel field effect transistor, insulated GATE FET (MOST) |
Mullard |
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