| No. |
Part Name |
Description |
Manufacturer |
| 1111 |
K4F160411D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 1112 |
K4F160411D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 1113 |
K4F160412D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 1114 |
K4F160412D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 1115 |
K4F160811D-B |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 1116 |
K4F160811D-F |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 1117 |
K4F160812D-B |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 1118 |
K4F160812D-F |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 1119 |
K4F170411D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 1120 |
K4F170411D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 1121 |
K4F170412D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 1122 |
K4F170412D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 1123 |
K4F170811D-B |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 1124 |
K4F170811D-F |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 1125 |
K4F170812D-B |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 1126 |
K4F170812D-F |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 1127 |
K4F171611D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 1128 |
K4F171611D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 1129 |
K4F171612D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 1130 |
K4F171612D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 1131 |
K4F640412D-JC_L |
16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 1132 |
K4F640412D-TC_L |
16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 1133 |
K4F640812D-JC_L |
8M x 8bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 1134 |
K4F640812D-TC_L |
8M x 8bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 1135 |
K4F660412D-JC_L |
16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 8K refresh cycle. |
Samsung Electronic |
| 1136 |
K4F660412D-TC_L |
16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 8K refresh cycle. |
Samsung Electronic |
| 1137 |
K4F660812D-JC_L |
8M x 8bit CMOS dynamic RAM with fast page mode. 3.3V, 8K refresh cycle. |
Samsung Electronic |
| 1138 |
K4F660812D-TC_L |
8M x 8bit CMOS dynamic RAM with fast page mode. 3.3V, 8K refresh cycle. |
Samsung Electronic |
| 1139 |
LB11690 |
Brushless Motor Drivers (3-phase drive): Electric bicycles motor driver |
SANYO |
| 1140 |
LC-CA1212 |
Valve Regulated Lead-Acid Batteries - CYCLE LONG-LIFE\nAND LONG-LIFE FOR ENERGY STORAGE (LC-CA) |
Panasonic |
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