| No. |
Part Name |
Description |
Manufacturer |
| 11131 |
1N5524B-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 11132 |
1N5524B-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 11133 |
1N5524BUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 11134 |
1N5524BUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 11135 |
1N5524C |
Leaded Zener Diode General Purpose |
Central Semiconductor |
| 11136 |
1N5524C |
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.6 V. Test current 3.0 mAdc. +-2% tolerance. |
Jinan Gude Electronic Device |
| 11137 |
1N5524C |
Diode Zener Single 5.6V 2% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 11138 |
1N5524C-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 11139 |
1N5524C-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 11140 |
1N5524CUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 11141 |
1N5524CUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 11142 |
1N5524D |
Leaded Zener Diode General Purpose |
Central Semiconductor |
| 11143 |
1N5524D |
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.6 V. Test current 3.0 mAdc. +-1% tolerance. |
Jinan Gude Electronic Device |
| 11144 |
1N5524D |
Diode Zener Single 5.6V 1% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 11145 |
1N5524D-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 11146 |
1N5524D-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 11147 |
1N5524DUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 11148 |
1N5524DUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 11149 |
1N5525 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 11150 |
1N5525 |
Low Voltage Avalanche Zener |
Microsemi |
| 11151 |
1N5525 |
Diode Zener Single 6.2V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 11152 |
1N5525A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 6.2 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 11153 |
1N5525A |
Low Voltage Avalanche Zener |
Microsemi |
| 11154 |
1N5525A |
Diode Zener Single 6.2V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 11155 |
1N5525A-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 11156 |
1N5525A-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 11157 |
1N5525AUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 11158 |
1N5525AUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 11159 |
1N5525B |
Leaded Zener Diode General Purpose |
Central Semiconductor |
| 11160 |
1N5525B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 6.2 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| | | |
