| No. |
Part Name |
Description |
Manufacturer |
| 11131 |
BT168D |
Thyristors logic level for RCD/ GFI/ LCCB applications |
Philips |
| 11132 |
BT168DW |
Thyristors logic level for RCD/ GFI/ LCCB applications |
Philips |
| 11133 |
BT168E |
Thyristors logic level for RCD/GFI/LCCB applications |
Philips |
| 11134 |
BT168EW |
Thyristors logic level for RCD/ GFI/ LCCB applications |
Philips |
| 11135 |
BT168G |
Thyristors logic level for RCD/GFI/LCCB applications |
Philips |
| 11136 |
BT168GW |
Thyristors logic level for RCD/GFI/LCCB applications |
Philips |
| 11137 |
BT168W |
Thyristors logic level for RCD/ GFI/ LCCB applications |
Philips |
| 11138 |
BTX41-CASE |
The shape and dimensions of the case |
mble |
| 11139 |
BU100A |
Planar transistor for switching applications |
SGS-ATES |
| 11140 |
BU120 |
Silicon MESA NPN transistor, high voltage and power switching applications |
SGS-ATES |
| 11141 |
BU125 |
Planar transistor for switching applications |
SGS-ATES |
| 11142 |
BU125S |
Planar transistor for switching applications |
SGS-ATES |
| 11143 |
BU204 |
Silicon high voltage, high power NPN transistor for TV applications - metal case |
IPRS Baneasa |
| 11144 |
BU205 |
Silicon high voltage, high power NPN transistor for TV applications - metal case |
IPRS Baneasa |
| 11145 |
BU205A |
Silicon high voltage, high power NPN transistor for TV applications - metal case |
IPRS Baneasa |
| 11146 |
BU206 |
Silicon high voltage, high power NPN transistor for TV applications - metal case |
IPRS Baneasa |
| 11147 |
BU207 |
Silicon high voltage, high power NPN transistor for TV applications - metal case |
IPRS Baneasa |
| 11148 |
BU208 |
Silicon high voltage, high power NPN transistor for TV applications - metal case |
IPRS Baneasa |
| 11149 |
BU208 |
NPN silicon power high-voltage transistor designed for use in colour televisions |
Motorola |
| 11150 |
BU208A |
Silicon high voltage, high power NPN transistor for TV applications - metal case |
IPRS Baneasa |
| 11151 |
BU208A |
NPN, horizontal deflection transistor. Designed for use in televisions. Vceo = 700Vdc, Vcex = 1500Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 12.5W. |
USHA India LTD |
| 11152 |
BU208A |
NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS) |
Wing Shing Computer Components |
| 11153 |
BU208B |
Silicon high voltage, high power NPN transistor for TV applications - metal case |
IPRS Baneasa |
| 11154 |
BU209 |
Silicon high voltage, high power NPN transistor for TV applications - metal case |
IPRS Baneasa |
| 11155 |
BU209 |
NPN silicon power high-voltage transistor designed for use in colour televisions |
Motorola |
| 11156 |
BU209A |
NPN silicon power high-voltage transistor designed for use in colour televisions |
Motorola |
| 11157 |
BU2508AF |
NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS) |
Wing Shing Computer Components |
| 11158 |
BU2508DF |
NPN TRIPLE DIFFUSE PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS) |
Wing Shing Computer Components |
| 11159 |
BU2630F/FV |
Communications LSIs > RF signal processing of portables application > PLL frequency synthesizer for radio communication |
ROHM |
| 11160 |
BU326S |
Silicon multiepitaxial biplanar® NPN high voltage power transistor intended for switch-mode CTV applications |
SGS-ATES |
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