| No. |
Part Name |
Description |
Manufacturer |
| 11161 |
U3GWJ2C42 |
SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 11162 |
U5FWJ2C48M |
SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 11163 |
U5FWJ2C48M |
SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 11164 |
U5FWK2C42 |
SCHOTTKY BARRIER RECTIFIER TRENCH SCHOTTKY BARRIER TYPE SWITCHING MODE POWER SUPPLY APPLICATION |
TOSHIBA |
| 11165 |
U5FWK2C42 |
SCHOTTKY BARRIER RECTIFIER TRENCH SCHOTTKY BARRIER TYPE SWITCHING MODE POWER SUPPLY APPLICATION |
TOSHIBA |
| 11166 |
U5GWJ2C42C |
Schottky Barrier Rectifier Stack Schottky Barrier Type Swiching Mode Power Supply Application |
TOSHIBA |
| 11167 |
U5GWJ2C42C |
Schottky Barrier Rectifier Stack Schottky Barrier Type Swiching Mode Power Supply Application |
TOSHIBA |
| 11168 |
U5GWJ2C48C |
SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 11169 |
U5GWJ2C48C |
SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 11170 |
UML4NTR |
PNP Low VCE(sat) Transistor + Schottky Barrier Diode |
ROHM |
| 11171 |
UML6NTR |
NPN Low VCE(sat) Transistor + Schottky Barrier Diode |
ROHM |
| 11172 |
UPA2780GR |
SWITCHING N-CHANNEL POWER MOSFET/SCHOTTKY BARRIER DIODE |
NEC |
| 11173 |
UPA2781GR |
SWITCHING N-CHANNEL POWER MOSFET/SCHOTTKY BARRIER DIODE |
NEC |
| 11174 |
UPA2782GR |
SWITCHING N-CHANNEL POWER MOSFET/SCHOTTKY BARRIER DIODE |
NEC |
| 11175 |
UPA507TE |
Pch enhancement-type MOS FET (On-chip schottky barrier diode(SBD)) |
NEC |
| 11176 |
UPA507TE-T1 |
Pch enhancement-type MOS FET (On-chip schottky barrier diode(SBD)) |
NEC |
| 11177 |
UPA507TE-T2 |
Pch enhancement-type MOS FET (On-chip schottky barrier diode(SBD)) |
NEC |
| 11178 |
UPA508TE |
Nch enhancement-type MOS FET (On-chip schottky barrier diode(SBD)) |
NEC |
| 11179 |
UPA508TE-T1 |
Nch enhancement-type MOS FET (On-chip schottky barrier diode(SBD)) |
NEC |
| 11180 |
UPA508TE-T2 |
Nch enhancement-type MOS FET (On-chip schottky barrier diode(SBD)) |
NEC |
| 11181 |
US5L10 |
NPN Low VCE(sat) Transistor + Schottky Barrier Diode |
ROHM |
| 11182 |
US5L10TR |
NPN Low VCE(sat) Transistor + Schottky Barrier Diode |
ROHM |
| 11183 |
US5L12TR |
NPN Low VCE(sat) Transistor + Schottky Barrier Diode |
ROHM |
| 11184 |
USFB053 |
Schottky Barrier Diode |
Korea Electronics (KEC) |
| 11185 |
USFB073 |
Schottky Barrier Diode |
Korea Electronics (KEC) |
| 11186 |
USFB13 |
Schottky Barrier Diode |
Korea Electronics (KEC) |
| 11187 |
USFB13A |
Schottky Barrier Diode |
Korea Electronics (KEC) |
| 11188 |
USFB13L |
Schottky Barrier Diode |
Korea Electronics (KEC) |
| 11189 |
USFB14 |
Schottky Barrier Diode |
Korea Electronics (KEC) |
| 11190 |
V0402MHS03NH |
Surface mount varistor. Nickel barrier termination subject to availibility. Capacitance 3pF. 7in diameter reel. |
Littelfuse |
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