| No. |
Part Name |
Description |
Manufacturer |
| 11161 |
BAV97 |
Microwave detector diode |
Philips |
| 11162 |
BAY66 |
Silicon power varactor diode for frequency multipliers up to 1 GHz |
VALVO |
| 11163 |
BAY96 |
Varactor diode |
mble |
| 11164 |
BAY96 |
Silicon Multiplier varactor diode |
Philips |
| 11165 |
BAY96 |
Silicon planar epitaxial power varactor diode for frequency multipliers up to approx. 500 MHz |
VALVO |
| 11166 |
BBY31 |
Hyperabrupt varactor diode-Not recommended for new designs |
Zetex Semiconductors |
| 11167 |
BBY33BB-2 |
Silicon Tuning Varactor (Tuning varactor in passivated Mesa technology epitaxial design) |
Siemens |
| 11168 |
BBY33BB-2 |
Silicon Tuning Varactor (Tuning varactor in passivated Mesa technology epitaxial design) |
Siemens |
| 11169 |
BBY33DA-2 |
Silicon Tuning Varactor (Abrupt junction tuning diode Tuning range 25 V High figure of merit) |
Siemens |
| 11170 |
BBY35F |
Silicon Tuning Varactor (Hyperabrupt junction tuning diode Frequency linear tuning range 4 � 12 V) |
Siemens |
| 11171 |
BBY40 |
Hyperabrupt varactor diode-Not recommended for new designs |
Zetex Semiconductors |
| 11172 |
BC107A |
NPN transistor for general purpose audio amplifiers, collector-emitter=45V, collector current=0.1A, hFE= 180 |
SGS Thomson Microelectronics |
| 11173 |
BC107B |
NPN transistor for general purpose audio amplifiers, collector-emitter=45V, collector current=0.1A, hFE= 290 |
SGS Thomson Microelectronics |
| 11174 |
BC108A |
NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 180 |
SGS Thomson Microelectronics |
| 11175 |
BC108B |
NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 290 |
SGS Thomson Microelectronics |
| 11176 |
BC108C |
NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 520 |
SGS Thomson Microelectronics |
| 11177 |
BC109B |
NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 290 |
SGS Thomson Microelectronics |
| 11178 |
BC109C |
NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 520 |
SGS Thomson Microelectronics |
| 11179 |
BC114ES6R |
Mini size of Discrete semiconductor elements |
SINYORK |
| 11180 |
BC114EUS6R |
Mini size of Discrete semiconductor elements |
SINYORK |
| 11181 |
BC114TS6R |
Mini size of Discrete semiconductor elements |
SINYORK |
| 11182 |
BC114TUS6R |
Mini size of Discrete semiconductor elements |
SINYORK |
| 11183 |
BC114YS6R |
Mini size of Discrete semiconductor elements |
SINYORK |
| 11184 |
BC114YUS6R |
Mini size of Discrete semiconductor elements |
SINYORK |
| 11185 |
BC124ES6R |
Mini size of Discrete semiconductor elements |
SINYORK |
| 11186 |
BC124EUS6R |
Mini size of Discrete semiconductor elements |
SINYORK |
| 11187 |
BC124XS6R |
Mini size of Discrete semiconductor elements |
SINYORK |
| 11188 |
BC124XUS6R |
Mini size of Discrete semiconductor elements |
SINYORK |
| 11189 |
BC143ES6R |
Mini size of Discrete semiconductor elements |
SINYORK |
| 11190 |
BC143EUS6R |
Mini size of Discrete semiconductor elements |
SINYORK |
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