| No. |
Part Name |
Description |
Manufacturer |
| 11191 |
SXA389BZ |
400 - 2500 MHz, 0.25 Watt Medium Power GaAs HBT Amplifier With Active Bias |
Qorvo |
| 11192 |
SXA389Z |
400 - 2500 MHz, 0.25 Watt Medium Power GaAs HBT Amplifier With Active Bias |
Qorvo |
| 11193 |
SXB2089Z |
5 - 2500 MHz InGaP / GaAs HBT Medium Power Amplifier |
Qorvo |
| 11194 |
SXH-189 |
5-2000 MHz medium power GaAs HBT amplifier. High 3rd order intercept: 39 dBm typ. at 1960 MHz. |
Stanford Microdevices |
| 11195 |
T3N/100T |
PNPN silicon medium power thyristor 100V |
Mikroelektronikai Vallalat |
| 11196 |
T3N/200T |
PNPN silicon medium power thyristor 200V |
Mikroelektronikai Vallalat |
| 11197 |
T3N/300T |
PNPN silicon medium power thyristor 300V |
Mikroelektronikai Vallalat |
| 11198 |
T3N/400T |
PNPN silicon medium power thyristor 400V |
Mikroelektronikai Vallalat |
| 11199 |
T3N/50T |
PNPN silicon medium power thyristor 50V |
Mikroelektronikai Vallalat |
| 11200 |
T50 |
Medium Power Phase Control Thyristors |
International Rectifier |
| 11201 |
T50RIA |
MEDIUM POWER PHASE CONTROL THYRISTORS |
International Rectifier |
| 11202 |
T70RIA |
MEDIUM POWER PHASE CONTROL THYRISTORS |
International Rectifier |
| 11203 |
T90RIA |
MEDIUM POWER PHASE CONTROL THYRISTORS |
International Rectifier |
| 11204 |
TAA293 |
General purpose medium frequency amplifier |
Mullard |
| 11205 |
TC1071VCT |
100mA Adjustable CMOS LDO with shutdown. Output voltage adjustable (V). Output voltage is programmed with a simple resistor divider from Vout to ADJ. |
TelCom Semiconductor |
| 11206 |
TC1301 |
Low Noise and Medium Power GaAs FETs |
TRANSCOM |
| 11207 |
TC32MEDB |
The TC32M is a fully-integrated processor supervisor in a 3-pin package. It provides three important functions to safeguard processor ... |
Microchip |
| 11208 |
TC32MEDB713 |
The TC32M is a fully-integrated processor supervisor in a 3-pin package. It provides three important functions to safeguard processor ... |
Microchip |
| 11209 |
TC53 |
The TC53 is a low power voltage detector. Typical supply current consumption is only 1�A at an input voltage of 2V. The voltage detection threshold setting is factory-programmed and guaranteed to ±2% accuracy. Threshold settings are a |
Microchip |
| 11210 |
TC54 |
The TC54 Series are CMOS voltage detectors, suited especially for battery-powered applications because of their extremely low 1uA operating current and small surface-mount packaging. Each part is laser trimmed to the desired threshold volt |
Microchip |
| 11211 |
TC58256DC |
SmartMediaTM |
TOSHIBA |
| 11212 |
TC58NS100DC |
SmartMediaTM |
TOSHIBA |
| 11213 |
TC58NS128ADC |
128-MBIT (16M x 8 BITS) CMOS NAND E PROM (16M BYTE SmartMedia ) |
TOSHIBA |
| 11214 |
TC58NS128BDC |
SmartMediaTM |
TOSHIBA |
| 11215 |
TC58NS128DC |
Vcc: -0.6 to 46V; 0.3W; 128Mbit (16M x 8-bits) CMOS NAND E2PROM (16M BYTE smart media) |
TOSHIBA |
| 11216 |
TC58NS256ADC |
256-MBIT (32M x 8 BITS) CMOS NAND E PROM (32M BYTE SmartMedia) |
TOSHIBA |
| 11217 |
TC58NS256BDC |
SmartMediaTM |
TOSHIBA |
| 11218 |
TC58NS256DC |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M � 8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM) |
TOSHIBA |
| 11219 |
TC58NS512ADC |
SmartMediaTM |
TOSHIBA |
| 11220 |
TC58NS512DC |
512-MBIT (64M x 8 BITS) CMOS NAND E 2 PROM (64M BYTE SmartMedia TM) |
TOSHIBA |
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