| No. |
Part Name |
Description |
Manufacturer |
| 11221 |
RM250DZ-M |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 11222 |
RM250UZ-24 |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 11223 |
RM250UZ-2H |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 11224 |
RM250UZ-H |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 11225 |
RM250UZ-M |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 11226 |
RM500DZ-24 |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 11227 |
RM500DZ-H |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 11228 |
RM500DZ-M |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 11229 |
RM500HA-24 |
DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 11230 |
RM500HA-2H |
DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 11231 |
RM500HA-H |
DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 11232 |
RM500HA-M |
DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 11233 |
RM500UZ-24 |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 11234 |
RM500UZ-2H |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 11235 |
RM500UZ-H |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 11236 |
RM500UZ-M |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 11237 |
RW STYLE |
Fixed Wirewound High Power Vitreous Resistors with Terminal Collars or Bands |
Vishay |
| 11238 |
RWST |
Fixed Wirewound High Power Vitreous Resistors, Electrical Traction Model |
Vishay |
| 11239 |
S1DR |
200 V, 1 A high power density, standard switching time PN-rectifier |
Nexperia |
| 11240 |
SBH52414X |
Components and FTTx solutions - Tx 1310nm/Rx 1550nm, High Power |
Infineon |
| 11241 |
SD1483 |
88-108MHz 28V 300W FM BROADCAST NPN High Power RF Transistor |
SGS Thomson Microelectronics |
| 11242 |
SD1504 |
1.2-1.4GHz 50W 45V RF NPN transistor, designed for high power pulse at L-Band |
SGS Thomson Microelectronics |
| 11243 |
SD1505 |
1.2-1.4GHz 150W 50V RF transistor designed for high power pulse at L-BAND |
SGS Thomson Microelectronics |
| 11244 |
SD1507 |
1.2-1.4GHz 285W 50V RF transistor designed for High Power pulse at L-BAND |
SGS Thomson Microelectronics |
| 11245 |
SD1536-03 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 11246 |
SD1536-08 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 11247 |
SDM4001 |
Silicon high power general purpose darlington NPN transistor - metal case |
IPRS Baneasa |
| 11248 |
SDM4002 |
Silicon high power general purpose darlington NPN transistor - metal case |
IPRS Baneasa |
| 11249 |
SDM4003 |
Silicon high power general purpose darlington NPN transistor - metal case |
IPRS Baneasa |
| 11250 |
SDM4004 |
Silicon high power general purpose darlington NPN transistor - metal case |
IPRS Baneasa |
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