| No. |
Part Name |
Description |
Manufacturer |
| 11221 |
2N5084 |
Silicon NPN Power Transistor, TO-111 (isolated collector) package |
Silicon Transistor Corporation |
| 11222 |
2N5084 |
Silicon NPN Power Transistor, TO-111 (isolated collector) package |
Silicon Transistor Corporation |
| 11223 |
2N5085 |
Silicon NPN Transistor |
Motorola |
| 11224 |
2N5085 |
Silicon NPN Power Transistor, TO-111 (isolated collector) package |
Silicon Transistor Corporation |
| 11225 |
2N5085 |
Silicon NPN Power Transistor, TO-111 (isolated collector) package |
Silicon Transistor Corporation |
| 11226 |
2N5086 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 11227 |
2N5086 |
0.625W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 150 - hFE |
Continental Device India Limited |
| 11228 |
2N5086 |
Low Noise PNP Transistor |
FERRANTI |
| 11229 |
2N5086 |
Low-Level, Low-Noise PNP Silicon Amplifier Transistor |
ITT Semiconductors |
| 11230 |
2N5086 |
SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS |
Micro Electronics |
| 11231 |
2N5086 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 11232 |
2N5086 |
Silicon PNP Transistor |
Motorola |
| 11233 |
2N5086 |
PNP Transistor - Low level AMPS |
National Semiconductor |
| 11234 |
2N5086 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 11235 |
2N5086 |
Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 11236 |
2N5087 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 11237 |
2N5087 |
0.625W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - hFE |
Continental Device India Limited |
| 11238 |
2N5087 |
Low Noise PNP Transistor |
FERRANTI |
| 11239 |
2N5087 |
Low-Power General Purpose PNP Silicon Amplifier Transistor |
ITT Semiconductors |
| 11240 |
2N5087 |
Low-Level, Low-Noise PNP Silicon Amplifier Transistor |
ITT Semiconductors |
| 11241 |
2N5087 |
SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS |
Micro Electronics |
| 11242 |
2N5087 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 11243 |
2N5087 |
Silicon PNP Transistor |
Motorola |
| 11244 |
2N5087 |
PNP Transistor - Low level AMPS |
National Semiconductor |
| 11245 |
2N5087 |
PNP general purpose transistor |
Philips |
| 11246 |
2N5087 |
PNP Epitaxial Silicon Transistor |
Samsung Electronic |
| 11247 |
2N5087 |
Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 11248 |
2N5087-D |
Amplifier Transistor PNP Silicon |
ON Semiconductor |
| 11249 |
2N5088 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 11250 |
2N5088 |
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.050A Ic, 300 - 900 hFE |
Continental Device India Limited |
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