| No. |
Part Name |
Description |
Manufacturer |
| 11251 |
BGA622L7 |
Infineon Technologies Introduces Fully Integrated SiGe LNA for GPS, WLAN, UMTS and further Mobile Applications |
Infineon |
| 11252 |
BGU6005 |
Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass |
NXP Semiconductors |
| 11253 |
BGU7004 |
SiGe:C Low Noise Amplifier MMIC for GPS |
NXP Semiconductors |
| 11254 |
BGU7005 |
SiGe:C LNA MMIC for GPS, GLONASS, Galileo and Compass |
NXP Semiconductors |
| 11255 |
BGU7007 |
SiGe:C LNA MMIC for GPS, GLONASS, Galileo and Compass |
NXP Semiconductors |
| 11256 |
BGU7008 |
SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS and Galileo |
NXP Semiconductors |
| 11257 |
BGU8004 |
SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass |
NXP Semiconductors |
| 11258 |
BGU8006 |
SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass |
NXP Semiconductors |
| 11259 |
BGU8007 |
SiGe:C LNA MMIC for GPS, GLONASS, Galileo and Compass |
NXP Semiconductors |
| 11260 |
BGU8009 |
SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass |
NXP Semiconductors |
| 11261 |
BGU8010 |
SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass |
NXP Semiconductors |
| 11262 |
BGU8011 |
SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass |
NXP Semiconductors |
| 11263 |
BGY12 |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 11264 |
BGY12A |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 11265 |
BGY12B |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 11266 |
BGY12D-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 11267 |
BGY12E-1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 11268 |
BGY12F-2H |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 11269 |
BGY12F-2I |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 11270 |
BGY13 |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 11271 |
BGY13A |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 11272 |
BGY13B |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 11273 |
BGY13D-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 11274 |
BGY13E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 11275 |
BGY13F-2H |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 11276 |
BGY13FA-1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 11277 |
BGY14 |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 11278 |
BGY14A |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 11279 |
BGY14B |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 11280 |
BGY14D-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
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