| No. |
Part Name |
Description |
Manufacturer |
| 11251 |
Q62702-F1613 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
| 11252 |
Q62702-F1627 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 11253 |
Q62702-F1628 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
| 11254 |
Q62702-F1665 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 11255 |
Q62702-F1685 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) |
Siemens |
| 11256 |
Q62702-F1773 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 11257 |
Q62702-F1774 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 11258 |
Q62702-F1775 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 11259 |
Q62702-F1776 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 11260 |
Q62702-F1794 |
NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V) |
Siemens |
| 11261 |
Q62702-F456 |
EXTREMELY LOW NOISE NPN SILICON BROADBAND TRANSISTORS |
Siemens |
| 11262 |
Q62702-F457 |
EXTREMELY LOW NOISE NPN SILICON BROADBAND TRANSISTORS |
Siemens |
| 11263 |
Q62702-F527 |
LOW NOISE NPN SILICON MICROWAVE TRANSISTOR UP TO 4GHz |
Siemens |
| 11264 |
Q62702-F655 |
LOW NOISE NPN SILICON MICROVAVE TRANSISTOR UP TO 2 GHz |
Siemens |
| 11265 |
Q62702G-39 |
GaAs MMIC (Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems) |
Siemens |
| 11266 |
Q62703-F106 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 11267 |
Q62703-F107 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 11268 |
Q62703-F108 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 11269 |
Q62703-F97 |
GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) |
Siemens |
| 11270 |
QPA2609 |
7 - 14 GHz GaAs Low Noise Amplifier |
Qorvo |
| 11271 |
QPA2609D |
7-14 GHz Low Noise Amplifier |
Qorvo |
| 11272 |
QPA2626 |
17 - 22 GHz GaAs Low Noise Amplifier |
Qorvo |
| 11273 |
QPA2626D |
17 - 23 GHz Low Noise Amplifier Die |
Qorvo |
| 11274 |
QPA2628 |
22 - 32 GHz GaAs Low Noise Amplifier |
Qorvo |
| 11275 |
QPA2628D |
25 - 31 GHz GaAs Low Noise Amplifier |
Qorvo |
| 11276 |
QPA2735 |
13.75 - 18 GHz GaAs Low Noise Amplifier |
Qorvo |
| 11277 |
QPA2735D |
13 - 20 GHz GaAs Low Noise Amplifier |
Qorvo |
| 11278 |
QPD2210 |
10 - 13 GHz GaAs Low Noise Amplifier |
Qorvo |
| 11279 |
QPL1000 |
8 - 11 GHz GaN Low Noise Amplifier |
Qorvo |
| 11280 |
QPL1002 |
0.03 - 3 GHz GaN Low Noise Amplifier |
Qorvo |
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