No. |
Part Name |
Description |
Manufacturer |
11281 |
1N5529AUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
11282 |
1N5529AUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
11283 |
1N5529B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
11284 |
1N5529B |
Low Voltage Avalanche Zener |
Microsemi |
11285 |
1N5529B |
Low Voltage Avalanche Zener |
Microsemi |
11286 |
1N5529B |
Diode Zener Single 9.1V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
11287 |
1N5529B (DO35) |
Low Voltage Avalanche Zener |
Microsemi |
11288 |
1N5529B-1 |
Low Voltage Avalanche Zener |
Microsemi |
11289 |
1N5529B-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
11290 |
1N5529BUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
11291 |
1N5529BUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
11292 |
1N5529C |
Leaded Zener Diode General Purpose |
Central Semiconductor |
11293 |
1N5529C |
0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-2% tolerance. |
Jinan Gude Electronic Device |
11294 |
1N5529C |
Diode Zener Single 9.1V 2% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
11295 |
1N5529C-1 |
Low Voltage Avalanche Zener |
Microsemi |
11296 |
1N5529C-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
11297 |
1N5529CUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
11298 |
1N5529CUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
11299 |
1N5529D |
Diode Zener Single 9.1V 1% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
11300 |
1N5529D-1 |
Low Voltage Avalanche Zener |
Microsemi |
11301 |
1N5529D-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
11302 |
1N5529DUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
11303 |
1N5529DUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
11304 |
1N5530 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
11305 |
1N5530 |
Low Voltage Avalanche Zener |
Microsemi |
11306 |
1N5530 |
Diode Zener Single 10V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
11307 |
1N5530A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 10.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
11308 |
1N5530A |
Low Voltage Avalanche Zener |
Microsemi |
11309 |
1N5530A |
Diode Zener Single 10V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
11310 |
1N5530A-1 |
Low Voltage Avalanche Zener |
Microsemi |
| | | |