| No. |
Part Name |
Description |
Manufacturer |
| 11311 |
BCM91250A |
Evaluation Board For BCM1250 |
Broadcom |
| 11312 |
BCM91250E |
PCI Evaluation Board For BCM1250 |
Broadcom |
| 11313 |
BCM91250E |
PCI Evaluation Board For BCM1250 |
Broadcom |
| 11314 |
BCM91250E |
PCI Evaluation Board For BCM1250 |
Broadcom |
| 11315 |
BCM93138 |
Advanced PHY Transmitter/Receiver Evaluation System |
Broadcom |
| 11316 |
BCM93214 |
DOCSIS/EURO-DOCSIS 2.0-Based Cable Modem Termination System |
Broadcom |
| 11317 |
BCM93510 |
VSB/QAM Receiver Evaluation System |
Broadcom |
| 11318 |
BCM94500 |
Advanced Modulation Satellite Receiver Evaluation System |
Broadcom |
| 11319 |
BCM94500 |
Advanced Modulation Satellite Receiver Evaluation System |
Broadcom |
| 11320 |
BCP68 |
NPN Silicon AF Transistor (For general AF application High collector current High current gain) |
Siemens |
| 11321 |
BCP68-10 |
NPN Silicon AF Transistor (For general AF application High collector current High current gain) |
Siemens |
| 11322 |
BCP68-16 |
NPN Silicon AF Transistor (For general AF application High collector current High current gain) |
Siemens |
| 11323 |
BCP68-25 |
NPN Silicon AF Transistor (For general AF application High collector current High current gain) |
Siemens |
| 11324 |
BCP69 |
PNP Silicon AF Transistor (For general AF application High collector current High current gain) |
Siemens |
| 11325 |
BCP69-10 |
PNP Silicon AF Transistor (For general AF application High collector current High current gain) |
Siemens |
| 11326 |
BCP69-16 |
PNP Silicon AF Transistor (For general AF application High collector current High current gain) |
Siemens |
| 11327 |
BCP69-25 |
PNP Silicon AF Transistor (For general AF application High collector current High current gain) |
Siemens |
| 11328 |
BCR08AM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 11329 |
BCR08AS |
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
| 11330 |
BCR08AS-8 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 11331 |
BCR08AS-8 |
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
| 11332 |
BCR10CM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 11333 |
BCR10CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 11334 |
BCR10CS |
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
| 11335 |
BCR10PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 11336 |
BCR10UM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 11337 |
BCR12 |
MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 11338 |
BCR12CM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 11339 |
BCR12CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 11340 |
BCR12CS |
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
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