| No. |
Part Name |
Description |
Manufacturer |
| 11311 |
MC1550G |
RF-IF amplifier monolithic silicon epitaxial passivated |
Motorola |
| 11312 |
MC2831 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 11313 |
MC2832 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 11314 |
MC2833 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 11315 |
MC2834 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 11316 |
MC2835 |
Small signal diode. For general switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
Isahaya Electronics Corporation |
| 11317 |
MC2836 |
Small signal diode. For general switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 11318 |
MC2837 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 85 V. |
Isahaya Electronics Corporation |
| 11319 |
MC2838 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 11320 |
MC2839 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 85 V. |
Isahaya Electronics Corporation |
| 11321 |
MC2840 |
Small signal diode. For general switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
Isahaya Electronics Corporation |
| 11322 |
MC2841 |
FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 11323 |
MC2844 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 11324 |
MC2845 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
Isahaya Electronics Corporation |
| 11325 |
MC2846 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 11326 |
MC2848 |
FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 11327 |
MC2850 |
Small signal diode. For general switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
Isahaya Electronics Corporation |
| 11328 |
MC2852 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 11329 |
MC2854 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 11330 |
MC961 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 11331 |
MC971 |
For High Speed Swiching Application Silicon Epitaxial Type(Common Cathode) |
Isahaya Electronics Corporation |
| 11332 |
MC981 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 11333 |
MC982 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
Isahaya Electronics Corporation |
| 11334 |
MCL245 |
SILICON EPITAXIAL PLANAR DIODE |
Semtech |
| 11335 |
ME4101 |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
Micro Electronics |
| 11336 |
ME4102 |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
Micro Electronics |
| 11337 |
ME4103 |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
Micro Electronics |
| 11338 |
MEA250-12DA |
1200V fast recovery epitaxial diode (FRED) module |
IXYS |
| 11339 |
MEA300-06DA |
600V fast recovery epitaxial diode (FRED) module |
IXYS |
| 11340 |
MEA75-12 |
Fast Recovery Epitaxial Diode (FRED) Module |
IXYS Corporation |
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