| No. |
Part Name |
Description |
Manufacturer |
| 11311 |
2SC789 |
Silicon NPN Power Transistors TO-220C package |
Savantic |
| 11312 |
2SC789 |
Silicon NPN triple diffused MESA power transistor |
TOSHIBA |
| 11313 |
2SC790 |
Silicon NPN triple diffused power transistor, complementary to 2SA490 |
TOSHIBA |
| 11314 |
2SC791 |
Silicon NPN triple diffused MESA transistor, Black and White TV Vertical output applications |
TOSHIBA |
| 11315 |
2SC792 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
| 11316 |
2SC792 |
Silicon NPN triple diffused MESA transistor 300V 1.5A |
TOSHIBA |
| 11317 |
2SC793 |
Silicon NPN triple diffused MESA power transistor |
TOSHIBA |
| 11318 |
2SC799 |
NPN SILICON EPITAXIAL TRANSISTOR |
Unknow |
| 11319 |
2SC799 |
NPN SILICON EPITAXIAL TRANSISTOR |
Unknow |
| 11320 |
2SC828A |
Si NPN Epitaxial Planar |
Unknow |
| 11321 |
2SC830 |
Silicon NPN Triple Diffused Transistor, intended for use in HiFi Amp. Power Output |
Hitachi Semiconductor |
| 11322 |
2SC830H |
Silicon NPN Triple Diffused Transistor, intended for use in Medium Power Output, Medium Power Switching |
Hitachi Semiconductor |
| 11323 |
2SC853 |
NPN SILICON EPITAXIAL TRANSISTOR |
Unknow |
| 11324 |
2SC856 |
Silicon NPN Triple Diffused LTP Transistor, intended for use in Video Power Output |
Hitachi Semiconductor |
| 11325 |
2SC857H |
Silicon NPN Triple Diffused LTP Transistor, intended for use in High Voltage Switching |
Hitachi Semiconductor |
| 11326 |
2SC867 |
Silicon NPN Power Transistors TO-66 package |
Savantic |
| 11327 |
2SC892 |
NPN SILICON EPITAXIAL TRANSISTOR |
Unknow |
| 11328 |
2SC897 |
Silicon NPN Triple Diffused Transistor, intended for use in 35~50W Hi Fi Output |
Hitachi Semiconductor |
| 11329 |
2SC898 |
Silicon NPN Triple Diffused Transistor, intended for use in Hi Fi Power Output |
Hitachi Semiconductor |
| 11330 |
2SC89H |
Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 11331 |
2SC907AH |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier and Medium Speed Switching |
Hitachi Semiconductor |
| 11332 |
2SC907H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier and Medium Speed Switching |
Hitachi Semiconductor |
| 11333 |
2SC90H |
Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 11334 |
2SC917 |
Silicon NPN Planar Transistor, intended for use in TV Video IF Final Stage |
Hitachi Semiconductor |
| 11335 |
2SC91H |
Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 11336 |
2SC923 |
NPN Silicon Transistor |
NEC |
| 11337 |
2SC935 |
Silicon NPN Triple Diffused Transistor, JEDEC TO-3, intended for use in Transless TV Stabilized Power Supply |
Hitachi Semiconductor |
| 11338 |
2SC936 |
Silicon NPN Triple Diffused Transistor, JEDEC TO-3, intended for use in Transless TV Vertical Deflection Output |
Hitachi Semiconductor |
| 11339 |
2SC937 |
Silicon NPN Triple Diffused Transistor, JEDEC TO-3, intended for use in Transless TV Horizontal Deflection Output |
Hitachi Semiconductor |
| 11340 |
2SC940 |
NPN silicon expitaxial MESA transistor for B/W TV horizontal deflection output |
NEC |
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