| No. |
Part Name |
Description |
Manufacturer |
| 11311 |
2N5200 |
Silicon NPN Transistor |
Motorola |
| 11312 |
2N5201 |
Silicon NPN Transistor |
Motorola |
| 11313 |
2N5202 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
| 11314 |
2N5202 |
Silicon NPN Transistor |
Motorola |
| 11315 |
2N5202 |
Silicon NPN power transistor, TO-66 package |
Silicon Transistor Corporation |
| 11316 |
2N5202 |
Silicon NPN power transistor, TO-66 package |
Silicon Transistor Corporation |
| 11317 |
2N5208 |
PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz |
Motorola |
| 11318 |
2N5208 |
Silicon PNP Transistor |
Motorola |
| 11319 |
2N5209 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 11320 |
2N5209 |
Low Noise NPN Transistor |
FERRANTI |
| 11321 |
2N5209 |
Low-Level, Low-Noise NPN Silicon amplifier transistor |
ITT Semiconductors |
| 11322 |
2N5209 |
NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS |
Micro Electronics |
| 11323 |
2N5209 |
NPN silicon annular transistor |
Motorola |
| 11324 |
2N5209 |
Silicon NPN Transistor |
Motorola |
| 11325 |
2N5209 |
NPN Transistor - Low Level AMPS |
National Semiconductor |
| 11326 |
2N5209 |
Amplifier Transistors(NPN Silicon) |
ON Semiconductor |
| 11327 |
2N5209-D |
Amplifier Transistors NPN Silicon |
ON Semiconductor |
| 11328 |
2N5209RLRE |
Amplifier Transistor NPN |
ON Semiconductor |
| 11329 |
2N520A |
Germanium PNP Transistor |
Motorola |
| 11330 |
2N521 |
Germanium PNP Transistor |
Motorola |
| 11331 |
2N5210 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 11332 |
2N5210 |
Low Noise NPN Transistor |
FERRANTI |
| 11333 |
2N5210 |
Low-Level, Low-Noise NPN Silicon amplifier transistor |
ITT Semiconductors |
| 11334 |
2N5210 |
NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS |
Micro Electronics |
| 11335 |
2N5210 |
NPN silicon annular transistor |
Motorola |
| 11336 |
2N5210 |
Silicon NPN Transistor |
Motorola |
| 11337 |
2N5210 |
NPN Transistor - Low Level AMPS |
National Semiconductor |
| 11338 |
2N5210 |
Amplifier Transistors(NPN Silicon) |
ON Semiconductor |
| 11339 |
2N5210 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 11340 |
2N5210 |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 50V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
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