| No. |
Part Name |
Description |
Manufacturer |
| 11341 |
G5851-23 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 11342 |
G5852-103 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 11343 |
G5852-11 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 11344 |
G5852-13 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 11345 |
G5852-203 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 11346 |
G5852-21 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 11347 |
G5852-23 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 11348 |
G5853-103 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 11349 |
G5853-11 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 11350 |
G5853-13 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 11351 |
G5853-203 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 11352 |
G5853-21 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 11353 |
G5853-23 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 11354 |
G6121 |
Infrared detector module with preamp |
Hamamatsu Corporation |
| 11355 |
G6122 |
Infrared detector module with preamp |
Hamamatsu Corporation |
| 11356 |
G6122-03 |
Infrared detector module with preamp |
Hamamatsu Corporation |
| 11357 |
G6126 |
Infrared detector module with preamp |
Hamamatsu Corporation |
| 11358 |
G6262 |
GaAsP photodiode |
Hamamatsu Corporation |
| 11359 |
G6742 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 11360 |
G6742-003 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 11361 |
G6742-01 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 11362 |
G6849 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 11363 |
G6849-01 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 11364 |
G6854-01 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 11365 |
G7096 |
ULTRAFAST MSM PHOTODETECTORS |
Hamamatsu Corporation |
| 11366 |
G7096-01 |
ULTRAFAST MSM PHOTODETECTORS |
Hamamatsu Corporation |
| 11367 |
G7150 |
InGaAs PIN photodiode array |
Hamamatsu Corporation |
| 11368 |
G7150-16 |
Active area: 0.45x1mm; spectral response range:0.9-1.7um; reverse voltage:5V; InGaAs PIN photodiode array: 16-element array. For near infrared (NIR) spectrophotometer |
Hamamatsu Corporation |
| 11369 |
G7151-16 |
InGaAs PIN photodiode array |
Hamamatsu Corporation |
| 11370 |
G7189 |
GaAsP photodiode |
Hamamatsu Corporation |
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