| No. |
Part Name |
Description |
Manufacturer |
| 11341 |
MEA75-12DA |
Fast Recovery Epitaxial Diode (FRED) Module |
IXYS Corporation |
| 11342 |
MEE250-12DA |
1200V fast recovery epitaxial diode (FRED) module |
IXYS |
| 11343 |
MEE300-06DA |
600V fast recovery epitaxial diode (FRED) module |
IXYS |
| 11344 |
MEE75-12DA |
Fast Recovery Epitaxial Diode (FRED) Module |
IXYS Corporation |
| 11345 |
MEK150-04DA |
Fast Recovery Epitaxial Diode (FRED) Module |
IXYS Corporation |
| 11346 |
MEK250-12DA |
1200V fast recovery epitaxial diode (FRED) module |
IXYS |
| 11347 |
MEK300-06DA |
600V fast recovery epitaxial diode (FRED) module |
IXYS |
| 11348 |
MEK350-02DA |
200V fast recovery epitaxial diode (FRED) module |
IXYS |
| 11349 |
MEK75-12DA |
Fast Recovery Epitaxial Diode (FRED) Module |
IXYS Corporation |
| 11350 |
MEO450-12DA |
1200V fast recovery epitaxial diode (FRED) module |
IXYS |
| 11351 |
MEO500-06DA |
600V fast recovery epitaxial diode (FRED) module |
IXYS |
| 11352 |
MEO550-02DA |
Fast Recovery Epitaxial Diode (FRED) Module |
IXYS Corporation |
| 11353 |
MF3304 |
PNP silicon epitaxial transistor designed for low-level, high-speed switching applications |
Motorola |
| 11354 |
MH0810 |
EPITAXIAL TRANSISTORS FOR 3-5W AF OUTPUT |
Micro Electronics |
| 11355 |
MH8100 |
EPITAXIAL TRANSISTORS FOR 3-5W AF OUTPUT |
Micro Electronics |
| 11356 |
MJ1000 |
Silicon epitaxial-base power NPN transistor in monolithic Darlington configuration |
SGS-ATES |
| 11357 |
MJ1001 |
Silicon epitaxial-base power NPN transistor in monolithic Darlington configuration |
SGS-ATES |
| 11358 |
MJ15003 |
Silicon N-P-N epitaxial-base high power transistor. 140V, 250W. |
General Electric Solid State |
| 11359 |
MJ15004 |
Silicon P-N-P epitaxial-base high-power transistor. -140V, 250W. |
General Electric Solid State |
| 11360 |
MJ15015 |
Silicon Epitaxial Planar Transistor |
Wing Shing Computer Components |
| 11361 |
MJ15022 |
Silicon N-P-N epitaxial-base high power transistor. |
General Electric Solid State |
| 11362 |
MJ15024 |
Silicon N-P-N epitaxial-base high power transistor. |
General Electric Solid State |
| 11363 |
MJ2500 |
60V silicon epitaxial-base darlington |
Comset Semiconductors |
| 11364 |
MJ2500 |
Silicon epitaxial-base power PNP transistor in monolithic Darlington configuration |
SGS-ATES |
| 11365 |
MJ2501 |
80V silicon epitaxial-base darlington |
Comset Semiconductors |
| 11366 |
MJ2501 |
Silicon epitaxial-base power PNP transistor in monolithic Darlington configuration |
SGS-ATES |
| 11367 |
MJ2955 |
Silicon P-N-P epitaxial-base high-power transistor. -100V, 150W. |
General Electric Solid State |
| 11368 |
MJ3000 |
60V silicon epitaxial-base darlington |
Comset Semiconductors |
| 11369 |
MJ3000 |
Silicon epitaxial-base power NPN transistor in monolithic Darlington configuration |
SGS-ATES |
| 11370 |
MJ3001 |
80V silicon epitaxial-base darlington |
Comset Semiconductors |
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