No. |
Part Name |
Description |
Manufacturer |
1141 |
2SD77H |
Germanium NPN Alloyed Junction Transistor, Low Speed Switching, Audio Frequency Power Output |
Hitachi Semiconductor |
1142 |
2SD780 |
AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
1143 |
2SD780R |
NPN silicon epitaxial transistor, audio frequency |
NEC |
1144 |
2SD795 |
Audio Frequency Power Amplifier,Low Speed Switching |
Unknow |
1145 |
2SD798 |
Power transistor for low frequency applications |
TOSHIBA |
1146 |
2SD809 |
Audio Frequency Power Amplifier,Low Speed Switching |
Unknow |
1147 |
2SD880 |
Silicon NPN triple diffused audio frequency power transistor |
TOSHIBA |
1148 |
2SD880 |
NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
1149 |
2SD880Y |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 20 @ Ic = 3A. Pd = 30W. |
USHA India LTD |
1150 |
2SJ106 |
Field Effect Transistor Silicon P Channel Junction Type Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications |
TOSHIBA |
1151 |
2SJ115 |
Silicon P-Channel MOS audio frequency power transistor |
TOSHIBA |
1152 |
2SJ144 |
Field Effect Transistor Silicon P Channel Junction Type Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications |
TOSHIBA |
1153 |
2SJ145 |
FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE |
Isahaya Electronics Corporation |
1154 |
2SJ313 |
Field Effect Transistor Silicon P Channel MOS Type Audio Frequency Power Amplifier Application |
TOSHIBA |
1155 |
2SJ338 |
Field Effect Transistor Silicon P Channel MOS Type Audio Frequency Power Amplifier Application |
TOSHIBA |
1156 |
2SJ440 |
FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE - AUDIO FREQUENCY POWER AMPLIFIER APPLICATION |
TOSHIBA |
1157 |
2SJ440-Y |
P CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATION) |
TOSHIBA |
1158 |
2SJ48 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
1159 |
2SJ486 |
Silicon P Channel MOS FET Low FrequencyPower Switching |
Hitachi Semiconductor |
1160 |
2SJ49 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
1161 |
2SJ50 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
1162 |
2SJ55 |
Silicon P-Channel MOS FET, for low frequency power amplifier, complementary pair with 2SK175 |
Hitachi Semiconductor |
1163 |
2SJ56 |
Silicon P-Channel MOS FET, for low frequency power amplifier, complementary pair with 2SK176 |
Hitachi Semiconductor |
1164 |
2SK133 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
1165 |
2SK134 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
1166 |
2SK135 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
1167 |
2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification |
Panasonic |
1168 |
2SK1740 |
HF amplifiers low frequency amplifiers analog switches |
SANYO |
1169 |
2SK187 |
SILICON N-CHANNEL JUNCTION FET LOW FREQUECY LOW NOISE AMPLIFIER |
Hitachi Semiconductor |
1170 |
2SK1875 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
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