| No. |
Part Name |
Description |
Manufacturer |
| 1141 |
1PS66SB63 |
1PS66SB63; 1PS79SB63; 5 V, 20 mA low C_d Schottky barrier diodes |
Philips |
| 1142 |
1PS66SB82 |
15 V, 30 mA low Cd Schottky barrier diodes |
Nexperia |
| 1143 |
1PS66SB82 |
15 V, 30 mA low Cd Schottky barrier diodes |
NXP Semiconductors |
| 1144 |
1PS66SB82 |
15 V, 30 mA low Cd Schottky barrier diodes |
Philips |
| 1145 |
1PS66SB82 |
1PS66SB82; 1PS88SB82; 15 V, 30 mA low Cd Schottky barrier diodes |
Philips |
| 1146 |
1PS76SB17 |
4 V, 30 mA low C_d Schottky barrier diode |
Nexperia |
| 1147 |
1PS76SB17 |
4 V, 30 mA low C_d Schottky barrier diode |
NXP Semiconductors |
| 1148 |
1PS79SB17 |
4 V, 30 mA low capacitance Schottky barrier diode |
Nexperia |
| 1149 |
1PS79SB17 |
4 V, 30 mA low C_d Schottky barrier diode |
NXP Semiconductors |
| 1150 |
1PS79SB17 |
1PS76SB17; 1PS79SB17; 4 V, 30 mA low C_d Schottky barrier diode |
Philips |
| 1151 |
1PS79SB17 |
4 V, 30 mA low C_d Schottky barrier diode |
Philips |
| 1152 |
1PS88SB82 |
15 V, 30 mA low Cd Schottky barrier diodes |
Nexperia |
| 1153 |
1PS88SB82 |
15 V, 30 mA low Cd Schottky barrier diodes |
NXP Semiconductors |
| 1154 |
1S1314 |
Silicon planar diode, communication and industrial applications, Low-Level Modulation |
TOSHIBA |
| 1155 |
1SS293 |
Diode Silicon Epitaxial Schottoky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 1156 |
1SS294 |
Diode Silicon Epitaxial Schottoky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 1157 |
1SS319 |
Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching |
TOSHIBA |
| 1158 |
1SS321 |
Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching |
TOSHIBA |
| 1159 |
1SS322 |
Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching |
TOSHIBA |
| 1160 |
1SS348 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 1161 |
1SS357 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 1162 |
1SS383 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 1163 |
1SS384 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 1164 |
1SS391 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 1165 |
1SS396 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 1166 |
2-AA116 |
HF germanium diode pair for low resistance radio detector and discriminator circuits |
TUNGSRAM |
| 1167 |
2-GCN53 |
Pair Germanium planar low-frequency n-p-n transistors |
Tesla Elektronicke |
| 1168 |
2023 |
Air Dielectric Directional Couplers Low Loss, Octave Bandwidth |
Tyco Electronics |
| 1169 |
2023-6121-06 |
1-2 GHz, Air dielectric directional coupler low loss, octave bandwidth |
MA-Com |
| 1170 |
2023-6121-06 |
Air Dielectric Directional Couplers Low Loss, Octave Bandwidth |
Tyco Electronics |
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