| No. |
Part Name |
Description |
Manufacturer |
| 1141 |
2N1711 |
Silicon NPN planar switching transistor with high current gain |
AEG-TELEFUNKEN |
| 1142 |
2N2193A |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 1143 |
2N2297 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 1144 |
2N2642 |
BIPOLAR DEVICES WITH POLARITY NPN |
New Jersey Semiconductor |
| 1145 |
2N3055 |
Diffused NPN silicon LF power transistor with very good second-breakdown properties, for high-power LF power amplifiers, stabilization circuits and power switch applications |
ITT Semiconductors |
| 1146 |
2N3423 |
BIPOLAR DEVICES WITH POLARITY NPN |
New Jersey Semiconductor |
| 1147 |
2N3553 |
Silicon NPN planar epitaxial transistor for transmitter applications at 175 MHz with 28 V supply voltage |
VALVO |
| 1148 |
2N3962 |
Silicon PNP low power transistor with high gain at low level |
ICCE |
| 1149 |
2N3963 |
Silicon PNP low power transistor with high gain at low level |
ICCE |
| 1150 |
2N3964 |
Silicon PNP low power transistor with high gain at low level |
ICCE |
| 1151 |
2N5861 |
BIPOLAR DEVICES WITH POLARITY NPN |
New Jersey Semiconductor |
| 1152 |
2N6093 |
75W (PEP) Emitter-Ballasted Overlay Transistor with Temperature-Sensing Diode |
RCA Solid State |
| 1153 |
2N6763 |
FET DEVICES WITH N_CHANNEL POLARITY |
New Jersey Semiconductor |
| 1154 |
2N6765 |
FET DEVICES WITH N_CHANNEL POLARITY |
New Jersey Semiconductor |
| 1155 |
2N6767 |
FET DEVICES WITH N_CHANNEL POLARITY |
New Jersey Semiconductor |
| 1156 |
2N6769 |
FET DEVICES WITH N_CHANNEL POLARITY |
New Jersey Semiconductor |
| 1157 |
2N6898 |
POWER MOSFET P CHANNEL WITH 25 AMPERE |
New Jersey Semiconductor |
| 1158 |
2N6962 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 30A, Parametric limits in accordance with MIL-S-19500/568 where applicable |
Siliconix |
| 1159 |
2N7593U3 |
250V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package. Also available with Total Dose Rating of 300kRads. |
International Rectifier |
| 1160 |
2N918 |
NPN silicon annular transistor with high reliability designed for use in VHF and UHF amplifier, mixer and oscillator applications |
Motorola |
| 1161 |
2SA0699 |
Power Transistor - Silicon PNP Epitaxial Planar Type - Power Amplifier - Complementary Pair with 2SC1226, 2SC1226A |
Panasonic |
| 1162 |
2SA0699A |
Power Transistor - Silicon PNP Epitaxial Planar Type - Power Amplifier - Complementary Pair with 2SC1226, 2SC1226A |
Panasonic |
| 1163 |
2SA1584 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 1164 |
2SA1634 |
TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE |
ROHM |
| 1165 |
2SA1635 |
TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE |
ROHM |
| 1166 |
2SA1747 |
Transistor - Silicon PNP Epitaxial Planar Type - Complementary pair with 2SC4561 |
Panasonic |
| 1167 |
2SA1758 |
TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE |
ROHM |
| 1168 |
2SA1760 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 1169 |
2SA1780 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 1170 |
2SA1809 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
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