| No. |
Part Name |
Description |
Manufacturer |
| 1141 |
2N4001 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. |
SemeLAB |
| 1142 |
2N4260 |
Chip Type 2C4261 Geometry 0014 Polarity PNP |
Semicoa Semiconductor |
| 1143 |
2N4260UB |
Chip Type 2C4261 Geometry 0014 Polarity PNP |
Semicoa Semiconductor |
| 1144 |
2N4261 |
Chip Type 2C4261 Geometry 0014 Polarity PNP |
Semicoa Semiconductor |
| 1145 |
2N4261UB |
Chip Type 2C4261 Geometry 0014 Polarity PNP |
Semicoa Semiconductor |
| 1146 |
2N4430 |
Trans GP BJT NPN 40V 0.001A 4-Pin MT66 |
New Jersey Semiconductor |
| 1147 |
2N5001 |
Silicon PNP Transistor |
Motorola |
| 1148 |
2N5001 |
Trans GP BJT PNP 80V 2A 3-Pin TO-59 |
New Jersey Semiconductor |
| 1149 |
2N5001 |
HIGH ENERCY NPN TRANSISTOR |
Solid State Devices Inc |
| 1150 |
2N7001 |
MOSPOWER N-Channel Enhancement Mode Transistor 240V 0.058A |
Siliconix |
| 1151 |
2N918 |
Chip Type 2C918 Geometry 0013 Polarity NPN |
Semicoa Semiconductor |
| 1152 |
2N918UB |
Chip Type 2C918 Geometry 0013 Polarity NPN |
Semicoa Semiconductor |
| 1153 |
2PG001 |
N-channel enhancement mode IGBT |
Panasonic |
| 1154 |
2SA1001 |
Trans GP BJT PNP 250V 1.5A |
New Jersey Semiconductor |
| 1155 |
2SB1001 |
Silicon PNP Epitaxial |
Hitachi Semiconductor |
| 1156 |
2SB1001 |
Silicon PNP Transistor |
Hitachi Semiconductor |
| 1157 |
2SB1001 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 1158 |
2SC1001 |
Industrial Transistor Specification Table |
TOSHIBA |
| 1159 |
2SC1001 |
Silicon NPN epitaxial planar UHF band power transistor |
TOSHIBA |
| 1160 |
2SC2001 |
NPN SILICON TRANSISTOR |
NEC |
| 1161 |
2SC2001 |
TO-92 Plastic-Encapsulate Transistors |
Unknow |
| 1162 |
2SC2001 |
Medium Power Amplifiers and Switches |
Unknow |
| 1163 |
2SC2001 |
Transistor. General purpose applications high total power disipation . Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 600mW. Collector current Ic = 7 |
USHA India LTD |
| 1164 |
2SC2001-K |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 1165 |
2SC2001-L |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 1166 |
2SC2001-M |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 1167 |
2SC3001 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 1168 |
2SC4001 |
NPN SILICON POWER TRANSISTOR |
NEC |
| 1169 |
2SC5001 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 1170 |
2SD1001 |
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
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