No. |
Part Name |
Description |
Manufacturer |
1141 |
BBY31 |
Hyperabrupt varactor diode-Not recommended for new designs |
Zetex Semiconductors |
1142 |
BBY40 |
Hyperabrupt varactor diode-Not recommended for new designs |
Zetex Semiconductors |
1143 |
BBY51 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
Siemens |
1144 |
BBY51-03W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
Siemens |
1145 |
BBY51-07 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation |
Siemens |
1146 |
BBY52 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
Siemens |
1147 |
BBY52-03W |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
Siemens |
1148 |
BBY53 |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
Siemens |
1149 |
BBY53-02W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
Siemens |
1150 |
BBY53-03W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
Siemens |
1151 |
BCM91125E |
PCI Evaluation Board For BCM1125/BCM1125H Processors |
Broadcom |
1152 |
BCM91125E |
PCI Evaluation Board For BCM1125/BCM1125H Processors |
Broadcom |
1153 |
BCM91125E |
PCI Evaluation Board For BCM1125/BCM1125H Processors |
Broadcom |
1154 |
BCM91250A |
Evaluation Board For BCM1250 |
Broadcom |
1155 |
BCM91250A |
Evaluation Board For BCM1250 |
Broadcom |
1156 |
BCM91250A |
Evaluation Board For BCM1250 |
Broadcom |
1157 |
BCM91250E |
PCI Evaluation Board For BCM1250 |
Broadcom |
1158 |
BCM91250E |
PCI Evaluation Board For BCM1250 |
Broadcom |
1159 |
BCM91250E |
PCI Evaluation Board For BCM1250 |
Broadcom |
1160 |
BCY59 |
Silicon NPN epitaxial planar transistor designed for use in AF input stages and driver stages. Complementary to BCY79 |
AEG-TELEFUNKEN |
1161 |
BCY79 |
Silicon PNP epitaxial planar transistor designed for use in AF input stages and driver stages. Complementary to BCY59 |
AEG-TELEFUNKEN |
1162 |
BD241A |
NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
1163 |
BD241B |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
1164 |
BD241C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
1165 |
BD242A |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
1166 |
BD242B |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
1167 |
BD242C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
1168 |
BD243A |
NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
1169 |
BD243B |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
1170 |
BD243C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
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