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Datasheets for D FOR

Datasheets found :: 3637
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No. Part Name Description Manufacturer
1141 BBY31 Hyperabrupt varactor diode-Not recommended for new designs Zetex Semiconductors
1142 BBY40 Hyperabrupt varactor diode-Not recommended for new designs Zetex Semiconductors
1143 BBY51 Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) Siemens
1144 BBY51-03W Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) Siemens
1145 BBY51-07 Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation Siemens
1146 BBY52 Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) Siemens
1147 BBY52-03W Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) Siemens
1148 BBY53 Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) Siemens
1149 BBY53-02W Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) Siemens
1150 BBY53-03W Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) Siemens
1151 BCM91125E PCI Evaluation Board For BCM1125/BCM1125H Processors Broadcom
1152 BCM91125E PCI Evaluation Board For BCM1125/BCM1125H Processors Broadcom
1153 BCM91125E PCI Evaluation Board For BCM1125/BCM1125H Processors Broadcom
1154 BCM91250A Evaluation Board For BCM1250 Broadcom
1155 BCM91250A Evaluation Board For BCM1250 Broadcom
1156 BCM91250A Evaluation Board For BCM1250 Broadcom
1157 BCM91250E PCI Evaluation Board For BCM1250 Broadcom
1158 BCM91250E PCI Evaluation Board For BCM1250 Broadcom
1159 BCM91250E PCI Evaluation Board For BCM1250 Broadcom
1160 BCY59 Silicon NPN epitaxial planar transistor designed for use in AF input stages and driver stages. Complementary to BCY79 AEG-TELEFUNKEN
1161 BCY79 Silicon PNP epitaxial planar transistor designed for use in AF input stages and driver stages. Complementary to BCY59 AEG-TELEFUNKEN
1162 BD241A NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W USHA India LTD
1163 BD241B NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W USHA India LTD
1164 BD241C NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W USHA India LTD
1165 BD242A PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. USHA India LTD
1166 BD242B PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. USHA India LTD
1167 BD242C PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. USHA India LTD
1168 BD243A NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W USHA India LTD
1169 BD243B NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W USHA India LTD
1170 BD243C NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W USHA India LTD


Datasheets found :: 3637
Page: | 35 | 36 | 37 | 38 | 39 | 40 | 41 | 42 | 43 |



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