| No. |
Part Name |
Description |
Manufacturer |
| 1141 |
MP254 |
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 25 Amperes) |
Rectron Semiconductor |
| 1142 |
MP256 |
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 25 Amperes) |
Rectron Semiconductor |
| 1143 |
MP258 |
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 25 Amperes) |
Rectron Semiconductor |
| 1144 |
MP3505 |
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 35 Amperes) |
Rectron Semiconductor |
| 1145 |
MP351 |
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 35 Amperes) |
Rectron Semiconductor |
| 1146 |
MP3510 |
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 35 Amperes) |
Rectron Semiconductor |
| 1147 |
MP352 |
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 35 Amperes) |
Rectron Semiconductor |
| 1148 |
MP354 |
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 35 Amperes) |
Rectron Semiconductor |
| 1149 |
MP356 |
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 35 Amperes) |
Rectron Semiconductor |
| 1150 |
MP358 |
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 35 Amperes) |
Rectron Semiconductor |
| 1151 |
MR2500L |
Diode 50V 25A 2-Pin Case D-6 |
New Jersey Semiconductor |
| 1152 |
MR327 |
Diode 500V 25A |
New Jersey Semiconductor |
| 1153 |
MTD1N50E |
TMOS POWER FET 1.0 AMPERE 500 VOLTS RDS(on) = 5.0 OHM |
Motorola |
| 1154 |
MUR140 |
Ultrafast Plastic Rectifier, Forward Current 1.0A, Reverse Recovery Time 50ns |
Vishay |
| 1155 |
MUR160 |
Ultrafast Plastic Rectifier, Forward Current 1.0A, Reverse Recovery Time 50ns |
Vishay |
| 1156 |
MURS140 |
Ultrafast Plastic Rectifier, Forward Current 1.0A, Reverse Recovery Time 50ns |
Vishay |
| 1157 |
MURS160 |
Ultrafast Plastic Rectifier, Forward Current 1.0A, Reverse Recovery Time 50ns |
Vishay |
| 1158 |
MURS340 |
Ultrafast Rectifiers, Forward Current 3.0A, Reverse Recovery Time 50ns |
Vishay |
| 1159 |
MURS360 |
Ultrafast Rectifiers, Forward Current 3.0A, Reverse Recovery Time 50ns |
Vishay |
| 1160 |
MZT2996 |
10 watt zener transient suppressor. Nom zener voltage 50 V. |
Motorola |
| 1161 |
MZT3331 |
50 watt zener transient suppressor. Nom zener voltage 50 V. |
Motorola |
| 1162 |
NGA-186 |
DC-6000 MHz, cascadable 50 ohm (1.2:1 VSWR) GaAs HBT MMIC amplifier. 12.0dB gain, 14.7 dBmP1dB at 1950MHz. |
Stanford Microdevices |
| 1163 |
NGA-286 |
DC-6000 MHz, cascadable 50 ohm (1.3:1 VSWR) GaAs HBT MMIC amplifier. High gain: 14.8 at 1950MHz. |
Stanford Microdevices |
| 1164 |
NGA-386 |
DC-5000 MHz, cascadable 50 ohm (1.2:1 VSWR) GaAs HBT MMIC amplifier. High gain: 18.9 at 1950MHz. |
Stanford Microdevices |
| 1165 |
NGA-489 |
0.5-10 GHz, cascadable 50 ohm InGa/GaAs HBT MMIC amplifier. High gain: 14.5 dB at 1950MHz. |
Stanford Microdevices |
| 1166 |
NGA-589 |
DC-5.5 GHz, cascadable 50 ohm InGa/GaAs HBT MMIC amplifier. High gain: 19.2 dB at 1950MHz. |
Stanford Microdevices |
| 1167 |
NGA-686 |
DC-6000 MHz, cascadable 50 ohm GaAs HBT MMIC amplifier. 11.4dB gain, 19.2 dBm P1dB at 1950MHz. |
Stanford Microdevices |
| 1168 |
NGA-689 |
DC-5000 MHz, cascadable 50 ohm(1.4:1 VSRM) GaAs HBT MMIC amplifier. 11.7dB gain, 18.9 dBm P1dB at 1950MHz. |
Stanford Microdevices |
| 1169 |
Notch/Band Reject Filter |
Center frequency 840 MHz, Poles 4, Bandwidth 4 MHz, Impedance 50 Ohms |
Skyworks Solutions |
| 1170 |
NTE5831 |
Stud mount standart recovery. Silicon rectifier, 3 Amp. Peak repetitive reverse voltage, DC blocking voltage 50V. |
NTE Electronics |
| | | |
