| No. |
Part Name |
Description |
Manufacturer |
| 1141 |
20KW144A |
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 1142 |
20KW160 |
160.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 1143 |
20KW160A |
160.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 1144 |
20KW172 |
172.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 1145 |
20KW172A |
172.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 1146 |
20KW180 |
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 1147 |
20KW180A |
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 1148 |
20KW192 |
192.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 1149 |
20KW192A |
192.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 1150 |
20KW204 |
204.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 1151 |
20KW204A |
204.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 1152 |
20KW216 |
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 1153 |
20KW216A |
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 1154 |
20KW232 |
232.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 1155 |
20KW232A |
232.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 1156 |
20KW240 |
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 1157 |
20KW240A |
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 1158 |
20KW256 |
256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 1159 |
20KW256A |
256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 1160 |
20KW280 |
280.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 1161 |
20KW280A |
280.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 1162 |
20KW300 |
300.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 1163 |
20KW300A |
300.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 1164 |
2223-10 |
2.2-2.3GHz 10W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 1165 |
2223-18 |
2.2-2.3GHz 18W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 1166 |
2223-3 |
2.2-2.3GHz 3W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 1167 |
2327-15 |
2.3-2.7GHz 15W 24V NPN silicon transistor designed for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 1168 |
2DA1201Y |
120V PNP SILICON TRANSISTOR IN SOT89 |
Diodes |
| 1169 |
2DA1201Y-7 |
120V PNP SILICON TRANSISTOR IN SOT89 |
Diodes |
| 1170 |
2DA1201YQTC |
120V PNP SILICON TRANSISTOR IN SOT89 |
Diodes |
| | | |
