| No. |
Part Name |
Description |
Manufacturer |
| 1141 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 1142 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
| 1143 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
| 1144 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
| 1145 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 1146 |
BF1012W |
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 1147 |
BF166 |
Epitaxial planar NPN transistor designed to be used as a gain-controlled VHF amplifier |
SGS-ATES |
| 1148 |
BF2000W |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 1149 |
BF2030 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 1150 |
BF2030W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 1151 |
BF2040 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 1152 |
BF2040W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 1153 |
BF509 |
Epitaxial planar PNP transistor, intended for use as controlled VHF preamplifier |
SGS-ATES |
| 1154 |
BF509S |
Epitaxial planar PNP transistor, intended for use as controlled VHF AGC preamplifier |
SGS-ATES |
| 1155 |
BF961 |
Dual gate, discharge mode, MOS field controlled tetrode |
Mikroelektronikai Vallalat |
| 1156 |
BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 1157 |
BG 3230 |
Two n-Channnel Automatic Gain Controlled RF-MOSFET in one Package |
Infineon |
| 1158 |
BG 3230R |
Two n-Channnel Automatic Gain Controlled RF-MOSFET in one Package |
Infineon |
| 1159 |
BGU7063 |
Analog controlled high linearity low noise variable gain amplifier |
NXP Semiconductors |
| 1160 |
BIC702C |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 1161 |
BIC702M |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 1162 |
BIC703C |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 1163 |
BIC703M |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 1164 |
BPX66 |
Photosilicon controlled switch |
Mullard |
| 1165 |
BQ24113A |
Host-Controlled Synchronous Swithc-Mode Li-Ion Charger w/2A FET, 1 or 2 Cell |
Texas Instruments |
| 1166 |
BQ24113ARHLR |
Host-Controlled Synchronous Swithc-Mode Li-Ion Charger w/2A FET, 1 or 2 Cell 20-VQFN -40 to 85 |
Texas Instruments |
| 1167 |
BQ24113ARHLRG4 |
Host-Controlled Synchronous Swithc-Mode Li-Ion Charger w/2A FET, 1 or 2 Cell 20-VQFN -40 to 85 |
Texas Instruments |
| 1168 |
BQ24113ARHLT |
Host-Controlled Synchronous Swithc-Mode Li-Ion Charger w/2A FET, 1 or 2 Cell 20-VQFN -40 to 85 |
Texas Instruments |
| 1169 |
BQ24113ARHLTG4 |
Host-Controlled Synchronous Swithc-Mode Li-Ion Charger w/2A FET, 1 or 2 Cell 20-VQFN -40 to 85 |
Texas Instruments |
| 1170 |
BQ24113RHLRG4 |
Host-controlled Synchronous Switch-Mode Li-Ion Charger w/2A FET in QFN-20, 1- or 2-cell 20-VQFN -40 to 85 |
Texas Instruments |
| | | |
