No. |
Part Name |
Description |
Manufacturer |
1141 |
J305 |
SFET RF/VHF/ UHF/ Amplitiers |
Fairchild Semiconductor |
1142 |
J305 |
N-Channel FETs - RF, VHF, UHF, Amplifiers |
National Semiconductor |
1143 |
J308 |
N-Channel FETs - RF, VHF, UHF, Amplifiers |
National Semiconductor |
1144 |
J308 |
JFET VHF/UHF Amplifiers |
ON Semiconductor |
1145 |
J308-D |
JFET VHF/UHF Amplifiers N-Channel - Depletion |
ON Semiconductor |
1146 |
J309 |
N-Channel FETs - RF, VHF, UHF, Amplifiers |
National Semiconductor |
1147 |
J309 |
JFET VHF/UHF Amplifiers |
ON Semiconductor |
1148 |
J310 |
N-Channel FETs - RF, VHF, UHF, Amplifiers |
National Semiconductor |
1149 |
J310 |
JFET VHF/UHF Amplifiers |
ON Semiconductor |
1150 |
J310RLRP |
JFET VHF/UHF Amplifiers |
ON Semiconductor |
1151 |
J310ZL1 |
JFET VHF/UHF Amplifiers |
ON Semiconductor |
1152 |
JAN2N2273 |
High-frequency germanium PNP transistor, designed for mlitary and high-reliability industrial as well as comercial VHF amplifier applications |
Motorola |
1153 |
JAN2N2708 |
NPN silicon annular transistor designed for low power IF and RF use in VHF/UHF amplifier, mixer and oscillator applications |
Motorola |
1154 |
JAN2N3127 |
PNP germanium mesa transistor designed for industrial and commercial VHF/UHF amplifier applications |
Motorola |
1155 |
JAN2N499 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
1156 |
JAN2N499A |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
1157 |
JAN2N502A |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
1158 |
JAN2N502B |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
1159 |
JAN2N918 |
NPN silicon annular transistor with high reliability designed for use in VHF and UHF amplifier, mixer and oscillator applications |
Motorola |
1160 |
JDP2S01AFS |
DIODE Silicon Epitaxial PIN Type UHF~VHF Band RF Switch Applications |
TOSHIBA |
1161 |
JDP2S01E |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
1162 |
JDP2S01S |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
1163 |
JDP2S01T |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
1164 |
JDP2S01U |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
1165 |
JDP2S02AFS |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
1166 |
JDP2S02S |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
1167 |
JDP2S02T |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
1168 |
JDP2S04E |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
1169 |
JDP4P02U |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
1170 |
JDS2S03S |
Diode Silicon Epitaxial Planar Type VHF Tuner Band Switch Applications |
TOSHIBA |
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